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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
Specifications
Brand Name :
IRF
Model Number :
IRLML6402TRPBF
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
5200PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
Description :
P-Channel 20 V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
Drain- Source Voltage :
-20 V
Continuous Drain Current, VGS @ -4.5V :
-3.7 A
Continuous Drain Current, VGS @-4.5V :
-2.2 A
Pulsed Drain Current  :
-22 A
Power Dissipation :
1.3 W
Description

 HEXFET Power MOSFET T

♦Ultra Low On-Resistance

♦P-Channel MOSFET

♦SOT-23 Footprint

♦Low Profile (<1.1mm)

♦Available in Tape and Reel

♦Fast Switching 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7 A
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2
IDM Pulsed Drain Current  -22
PD @TA = 25°C Power Dissipation 1.3 W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy 11 mJ
VGS Gate-to-Source Voltage ± 12 V

Product tags

p enhancement mosfet model

,

hexfet power mosfet

,

logic level power mosfet
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

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Product Detail
Brand Name :
IRF
Model Number :
IRLML6402TRPBF
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
20pcs
Price :
Negotiation
Contact Supplier
Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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