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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Specifications
Model Number :
MGW12N120D
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8400pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Description :
IGBT
Collector–Emitter Voltage :
1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) :
1200 Vdc
Gate–Emitter Voltage — Continuous :
± 20 Vdc
Total Power Dissipation @ TC = 25°C :
125 Watts
Operating and Storage Junction Temperature Range :
–55 to 150 °C
Short Circuit Withstand Time :
10 μs
Description


Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate

IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Collector–Emitter Voltage VCES 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc
Gate–Emitter Voltage — Continuous VGE ± 20 Vdc

Collector Current — Continuous @ TC = 25°C

— Continuous @ TC = 90°C

— Repetitive Pulsed Current (1)

IC25

IC90

ICM

20

12

40

Vdc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25°C

 PD

125

0.98

Watts

W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C

Short Circuit Withstand Time

(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

 tsc 10 μs

Thermal Resistance — Junction to Case – IGBT

— Junction to Case – Diode

— Junction to Ambient

RθJC

RθJC

RθJA

1.0

1.4

45

 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C
Mounting Torque, 6–32 or M3 screw 10 lbf*in (1.13 N*m)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

PACKAGE DIMENSIONS



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Product tags

mosfet power transistor

,

power mosfet transistor

,

insulated gate bipolar transistor igbt
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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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Product Detail
Model Number :
MGW12N120D
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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