Specifications
Model Number :
AP4511GD
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Total Power Dissipation :
2.0 W
Linear Derating Factor :
0.016 W/℃
Storage Temperature Range :
-55 to 150 ℃
Operating Junction Temperature Range :
-55 to 150 ℃
Maximum Thermal Resistance, Junction-ambient :
62.5 ℃/W
Drain-Source Breakdown Voltage :
35 V
Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

▼ Low Gate Charge

▼ Fast Switching Speed

▼ PDIP-8 Package

N-CH BVDSS 35V

RDS(ON) 25mΩ

ID 7A

P-CH BVDSS -35V

RDS(ON) 40mΩ

ID -6.1A

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 35 -35 V
VGS Gate-Source Voltage ±20 ±20 V
ID@TA=25℃ Continuous Drain Current3 7 -6.1 A
ID@TA=70℃ Continuous Drain Current3 5.7 -5 A
IDM Pulsed Drain Current1 30 -30 A
PD@TA=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Package Outline : DIP-8

Part Marking Information & Packing : DIP-8

Stock Offer (Hot sell)

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AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Ask Latest Price
Model Number :
AP4511GD
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Contact Supplier
AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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