Specifications
Brand Name :
FAIRCHILD
Model Number :
FDP085N10A
Certification :
Original Factory Pack
Place of Origin :
America
MOQ :
5pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
5600PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
Description :
N-Channel 100 V 96A (Tc) 188W (Tc) Through Hole TO-220-3
Drain to Source Voltage :
100V
Single Pulsed Avalanche Energy :
269mJ
Peak Diode Recovery dv/dt :
6.0V/ns
Operating and Storage Temperature Range :
-55 to +175°C
Description

FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Features

• RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

Thermal Characteristics​

Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.8 °C/W
RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W


Typical Performance Characteristics


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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Ask Latest Price
Brand Name :
FAIRCHILD
Model Number :
FDP085N10A
Certification :
Original Factory Pack
Place of Origin :
America
MOQ :
5pcs
Price :
Negotiation
Contact Supplier
FDP085N10A  N-Channel PowerTrench  MOSFET High Power Mosfet Transistors

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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