Specifications
Brand Name :
Ti
Model Number :
CSD17313Q2
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Delivery Time :
The goods will be shipped within 3 days once received fund
Packaging Details :
SON6
Description :
MOSFET N-CH 30V 5A 6WSON
Id - Continuous Drain Current :
5 A
Rds On - Drain-Source Resistance :
30 mOhms
Vgs - Gate-Source Voltage :
8 V
Qg - Gate Charge :
2.1 nC
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Description

CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

1 Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Pb-Free

  • RoHS Compliant

  • Halogen-Free

  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • DC-DC Converters

  • Battery and Load Management Applications

3 Description

This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Product Summary

(1) For all available packages, see the orderable addendum at the end of the data sheet.

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

30

V

Qg

Gate Charge Total (4.5 V)

2.1

nC

Qgd

Gate Charge Gate-to-Drain

0.4

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 3 V

31

VGS = 4.5 V

26

VGS = 8 V

24

VGS(th)

Threshold Voltage

1.3

V

Ordering Information

PART NUMBER

QTY

MEDIA

PACKAGE

SHIP

CSD17313Q2

3000

13-Inch Reel

SON 2-mm × 2-mm Plastic Package

Tape and Reel

CSD17313Q2T

250

7-Inch Reel

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

30

V

VGS

Gate-to-Source Voltage

+10 / –8

V

ID

Continuous Drain Current (package limited)

5

A

Continuous Drain Current (silicon limited), TC = 25°C

19

Continuous Drain Current(1)

7.3

IDM

Pulsed Drain Current, TA = 25°C(2)

57

A

PD

Power Dissipation(1)

2.4

W

Power Dissipation, TC = 25°C

17

TJ, TSTG

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse, ID =19A,L=0.1mH,RG =25Ω

18

mJ

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CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

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Brand Name :
Ti
Model Number :
CSD17313Q2
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Contact Supplier
CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
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