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CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant
CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant
Specifications
Brand Name :
Ti
Model Number :
CSD18504Q5A
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Delivery Time :
The goods will be shipped within 3 days once received fund
Packaging Details :
SON8
Description :
MOSFET N-CH 40V 15A/50A 8VSON
Channel Mode :
Enhancement
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
N-Channel :
6.6 mOhms
Description

CSD18504Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

1 Features

  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Logic Level

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • DC-DC Conversion

  • Secondary Side Synchronous Rectifier

  • Battery Motor Control

3 Description

This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

Qg

Gate Charge Total (4.5 V)

7.7

nC

Qgd

Gate Charge Gate-to-Drain

2.4

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

7.5

mΩ

VGS =10V

5.3

mΩ

VGS(th)

Threshold Voltage

1.9

V

Ordering Information

Device

Qty

Media

Package

Ship

CSD18504Q5A

2500

13-Inch Reel

SON 5 mm × 6 mm Plastic Package

Tape and Reel

CSD18504Q5AT

250

7-Inch Reel

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

50

A

Continuous Drain Current (Silicon limited), TC = 25°C

75

Continuous Drain Current(1)

15

IDM

Pulsed Drain Current(2)

275

A

PD

Power Dissipation(1)

3.1

W

Power Dissipation, TC = 25°C

77

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =43A,L=0.1mH,RG =25Ω

92

mJ

Product tags

igbt testing circuit diagram

,

meva0024 circuit board

,

p-channel mosfet sot-23
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CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant

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Product Detail
Brand Name :
Ti
Model Number :
CSD18504Q5A
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Contact Supplier
CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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