2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
Drain−Source Voltage |
VDSS |
60 |
Vdc |
Drain−Gate Voltage (RGS = 1.0 MW) |
VDGR |
60 |
Vdc |
Drain Current |
ID ID IDM |
± 115 ± 75 ± 800 |
mAdc |
Gate−Source Voltage |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Thermal Resistance, Junction−to−Ambient |
PD RqJA |
225 1.8 556 |
mW mW/°C °C/W |
Total Device Dissipation Thermal Resistance, Junction−to−Ambient |
PD RqJA |
300 2.4 417 |
mW mW/°C °C/W |
Junction and Storage Temperature |
TJ, Tstg |
− 55 to +150 |
°C |