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CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs
CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs
Specifications
Brand Name :
Ti
Model Number :
CSD87312Q3E
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Delivery Time :
The goods will be shipped within 3 days once received fund
Packaging Details :
QFN
Description :
MOSFET 2N-CH 30V 27A 8VSON
Channel Mode :
Enhancement
Configuration :
Dual
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 125 C
Transistor Polarity :
N-Channel
Number of Channels :
2 Channel
Description

CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs

FEATURES

  • CommonSourceConn ection
  • Ultr a L o w Drain to Drain On-Resistance
  • Space Saving SON 3.3 x 3.3mm Plastic Package
  • Optimized for 5V Gate Drive
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free APPLICATIONS

​APPLICATIONS

  • Adaptor/USB Input Protection for Notebook
  • PCs and Tablets

PRODUCT SUMMARY

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain to Source Voltage

30

V

Qg

Gate Charge Total (4.5V)

6.3

nC

Qgd

Gate Charge Gate to Drain

0.7

nC

RDD(on)

Drain to Drain On Resistance (Q1+Q2)

VGS = 4.5V

31

mΩ

VGS = 8V

27

mΩ

VGS(th)

Threshold Voltage

1.0

V

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

CSD87312Q3E

SON 3.3 x 3.3mm Plastic Package

13-In ch Reel

2500

Tape and Reel

ABSOLUTE MAXIMUM RATINGS

TA = 25°C

VALUE

UNIT

VDS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

+10/-8

V

ID

(1) Continuous Drain Current, TC = 25°C

27

A

IDM

Pulsed Drain Current

(2)

45

A

PD

Power Dissipation

2.5

W

TJ, TSTG

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω

29

mJ

DESCRIPTION

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Product tags

p-channel mosfet sot-23

,

p ch mosfet

,

n-channel mosfet
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CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

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Product Detail
Brand Name :
Ti
Model Number :
CSD87312Q3E
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Contact Supplier
CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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