Cascadable Silicon Bipolar MMIC Amplifier MSA-1105
Features
• High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block
• 3 dB Bandwidth: 50 MHz to 1.3 GHz
• 17.5 dBm Typical P1 dB at 0.5 GHz
• 3.6 dB Typical Noise Figure at 0.5 GHz
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
Description
The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.
The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
05 Plastic Package
MSA-1105 Absolute Maximum Ratings
Parameter | Absolute Maximum[1] |
---|---|
Device Current | 80 mA |
Power Dissipation[2,3] | 550 mW |
RF Input Power | +13 dBm |
Junction Temperature | 150°C |
Storage Temperature | –65 to 150°C |
Thermal Resistance[2,4]: θjc = 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8 mW/°C for TC > 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
05 Plastic Package Dimensions
Stock Offer (Hot Sell)
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