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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V
IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V
Specifications
Brand Name :
IR
Model Number :
IR2011STRPBF
Place of Origin :
THAILAND
MOQ :
10PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Supply Ability :
50000PCS
Delivery Time :
STOCK
Packaging Details :
2500PCS/REEL
Description :
High-Side or Low-Side Gate Driver IC Inverting 8-SOIC
Driven Configuration :
Half-Bridge
Number of Drivers :
2
Gate Type :
N-Channel MOSFET
Voltage - Supply :
10 V ~ 20 V
Logic Voltage - VIL, VIH :
0.7V, 2.2V
Current - Peak Output :
1A, 1A
High Side Voltage :
200V
Rise / Fall Time (Typ) :
35ns, 20ns
Description

IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver

Features

·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune

·Gate drive supply range from 10V to 20V

·Independent low and high side channels

·Input logicHIN/LIN active high

·Undervoltage lockout for both channels

·3.3V and 5V input logic compatible

·CMOS Schmitt-triggered inputs with pull-down

·Matched propagation delay for both channels ·Also available LEAD-FREE (PbF)

Applications

·Audio Class D amplifiers ·High power DC-DC SMPS converters

·Other high frequency applications

Description

The IR2011 isa high power, high speed powerMOSFET driver with independenthigh and low side referenced output channels, idealforAudio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction.

Product Attributes Select All
Categories Integrated Circuits (ICs)
Series -
Packaging Tape & Reel (TR)
Part Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 10 V ~ 20 V
Logic Voltage - VIL, VIH 0.7V, 2.2V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 35ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Part Number IR2011SPBF

Product tags

power mosfet driver

,

low side mosfet driver

,

power mosfet driver ic
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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

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Product Detail
Brand Name :
IR
Model Number :
IR2011STRPBF
Place of Origin :
THAILAND
MOQ :
10PCS
Price :
Negotiation
Payment Terms :
T/T, Western Union ， ESCROW
Contact Supplier
IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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