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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier
STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier
Specifications
Brand Name :
SANYO
Model Number :
STGIPS20K60
Certification :
Original Factory Pack
Place of Origin :
China
MOQ :
25pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
28000PCS
Delivery Time :
1 Day
Packaging Details :
DIP-16
Description :
Power Driver Module IGBT 3 Phase 600 V 17 A 25-PowerDIP Module (0.993", 25.23mm)
Temperature Range :
–55°C to +150°C
Payment Term :
T/T, Paypal, Western Union
Voltage :
10V
Current :
5A
Package :
SDIP-25
Factory Package :
TUBE
Description

STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

Features
■ 17 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors
■ Internal bootstrap diode
■ Interlocking function
■ VCE(sat) negative temperature coefficient
■ Short-circuit rugged IGBTs
■ Undervoltage lockout
■ Smart shutdown function
■ Comparator for fault protection against over temperature and overcurrent
■ DBC fully isolated package
■ Isolation rating of 2500 Vrms/min

Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines, refrigerators, air conditioners

Description
The STGIPS20K60 intelligent power module provides a compact, high performance AC motor drive for a simple and rugged design. It mainly targets low power inverters for applications such as home appliances and air conditioners. It combines ST proprietary control ICs with the most advanced short circuit rugged IGBT system

ABSOLUTE MAXIMUM RATINGS(1)

VPN Supply voltage applied between P - NU, NV, NW 450 V

VPN(surge) Supply voltage (surge) applied between P - NU, NV, NW 500 V VCES Collector emitter voltage (VIN(1) = 0)

3. Pulse width limited by max junction temperature

Each IGBT pulsed collector current 40 A

PTOT Each IGBT total dissipation at TC = 25°C

42 W tscw Short circuit withstand time,

VCE = 0.5 V(BR)CES TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 ÷ 5 V 5 µs


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Package Dimensions
unit:mm 2120

Product tags

international rectifier mosfet

,

rectifier diodes 1n4001 1n4007

,

cpci power supply
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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

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Product Detail
Brand Name :
SANYO
Model Number :
STGIPS20K60
Certification :
Original Factory Pack
Place of Origin :
China
MOQ :
25pcs
Price :
Negotiation
Contact Supplier
STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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