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Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
Specifications
Brand Name :
zmsh
Model Number :
GaAs-001
Certification :
no
Place of Origin :
china
MOQ :
5pcs
Price :
by case
Supply Ability :
1000pcs/month
Delivery Time :
1-4weeks
Packaging Details :
25pcs casstle in 100-grade cleaning room
material :
GaAs single crystal substrates
industry :
semicondutor wafer
application :
semiconductor substrate, led chip, optical glass window,device substrates
method :
VFG
size :
2-6inch commen
Description

2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)

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Application:

1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

Specification

Parameter

 Guaranteed / Actual Values UOM
Growth Method: VGF
Conduct Type: S-I-N
Dopant: Undoped
Diameter: 50.8± 0.1 mm
Orientation: (100)± 0.50
OF location/length: EJ [ 0-1-1]± 0.50/16±1
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1
Resistivity: Min: 1.0 E8 Max: 2.2 E8 Ω·cm
Mobility: ＞2000 cm2/v.s
EPD: ＜1500 / cm2
Thickness: 350± 20 µm
Edge Rounding: 0.25 mmR
Laser Marking: N/A
TTV/TIR: Max: 10 µm
BOW: Max: 10 µm
Warp: Max: 10 µm
Partical Count: ＜50/wafer(for particle>0.3um)
Surface Finish– front: Polished
Surface Finish –back: Etched
Epi-Ready:

Yes

Parameter Customer’s Requirements Guaranteed / Actual Values UOM
Growth Method: VGF VGF
Conduct Type: S-C-P S-C-P
Dopant: GaAs-Zn GaAs-Zn
Diameter: 50.8± 0.4 50.8± 0.4 mm
Orientation: (100)± 0.50 (100)± 0.50
OF location/length: EJ [ 0-1-1]± 0.50/16±1 EJ [ 0-1-1]± 0.50/16±1
IF location/length: EJ [ 0-1 1 ]± 0.50/7±1 EJ [ 0-1 1 ]± 0.50/7±1
Ingot CC: Min: 1 E19 Max: 5 E19 Min: 1.4 E19 Max: 1.9 E19 /cm3
Resistivity: Min: N/A Max: N/A Min: N/A Max: N/A Ω·cm
Mobility: Min: N/A Max: N/A Min: N/A Max: N/A cm2/v.s
EPD: Max: 5000 Min: 600 Max: 700 / cm2
Thickness: 350±25 350±25 µm
Surface Finish– front: Polished Polished
Surface Finish –back: Etched Etched
Epi-Ready:

Yes

Yes

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process!

Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

Product tags

gallium arsenide wafer

,

gallium nitride wafer

,

indium phosphide wafer
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Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

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Product Detail
Brand Name :
zmsh
Model Number :
GaAs-001
Certification :
no
Place of Origin :
china
MOQ :
5pcs
Price :
by case
Contact Supplier
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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