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500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
Specifications
Brand Name :
zmsh
Model Number :
InAs wafer
Place of Origin :
china
MOQ :
10pcs
Price :
by case
Supply Ability :
500pcs/month
Delivery Time :
1-4weeks
Packaging Details :
PET film in 100-grade cleaning room
material :
InAs single crystal substrates
industry :
semicondutor wafer
application :
semiconductor substrate, led chip, optical glass window,device substrates
method :
CZ
size :
10X10mm~3inch
Thickness :
0.5mm
Description

2inch diameter 50.8mm 500um thickness InAs substrates,Indium arsenide InAs crystal wafer, N-type 3inch 0.6mm InAs wafer,10x10mm square InAs wafers
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InAs single crystal substrate can be grown InAsSb/In - AsPSb InNAsSb heterostructure materials,such as making 2 ~ 14 microns of infrared wavelength light-emitting devices, with InAs single crystal substrate can also be grown epitaxial AlGaSb superlattice materials, production for infrared quantum cascade lasers.

ZMKJ can provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 3 inch .

InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .

General Properties

COMMON SPECIFICATIONS
crystal dope type
carrier concentration
cm-3
mobility rate(cm2/V.s)
dislocation density
(cm-2)
 size
InAs
N
5*1016
2*104
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
InAs
Sn
N
(5-20)*1017
>2000
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
InAs
Zn
P
(1-20) *1017
100-300
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
InAs
S
N
(1-10)*1017
>2000
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
size(mm)
Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mmalso can be customized
Ra Surface roughness(Ra):<=5A
polished 1sp or 2sp
package
100 grade packing in1000grade cleaning room

Growth LEC
Diameter Ø 2" / Ø 3"
Thickness 500 um ~ 625 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
EPD <= 15000 cm-2
Grade Epi polished grade / mechanical grade
Package Single wafer container

500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
ABOUT OUR ZMKJ

ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our
good reputatiaons. so we also can provide some other materials substrates as like:
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and by FOB
and pay condition of 50％ deposit,50％ before delivery.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.

Product tags

gallium arsenide wafer

,

indium phosphide wafer

,

si wafer thickness
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500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm

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Product Detail
Brand Name :
zmsh
Model Number :
InAs wafer
Place of Origin :
china
MOQ :
10pcs
Price :
by case
Supply Ability :
500pcs/month
Contact Supplier
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm
500um Thickness Indium Arsenide Wafer InAs Crystal Wafer 2 Inch Diameter 50.8mm

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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