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Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Specifications
Brand Name :
zmkj
Model Number :
InP-001
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Supply Ability :
1000pcs/month
Delivery Time :
1-4weeks
Packaging Details :
single wafer case
Materials :
InP single crystal
industry :
semiconductor substrates，device，
color :
black
size :
2-4inch
type :
N-type,P-type,Si-type
thickness :
350um,500um,625um
Description

2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer

InP introduce

InP single crystal
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

The tCZ growth (modified Czochralski method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn or Zn) is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide. we has developed a process to yield fully stoechiometric, high purity and low dislocation density InP single crystal.

The tCZ technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.

Specification

Item Diameter Type carrying concentration Mobility Resistivity MPD
S-InP 2 N (0.8-6)X10^18 (1.5-3.5)x10^3 　 ＜500
3 ＜500
4 ＜1x10^3
Fe-InP 2/3/4 SI 　 ＞1000 ＞0.5x10^7 ＞5x10^3
Zn-InP 2/3/4 P (0.6-6)X10^18 50-70 　 ＜1x10^3
No dope InP 2 N ＜3x10^16 (3.5-4)x10^3 　 ＜5x10^3
　 Other
Orientation (100)/(111)±0.5° Flatness
TTV Bow Warp
＜12um ＜12um ≤15um
1st OF Flat 16±2mm 22±2mm 32.5±2.5mm
2st OF Flat 8±1mm 11±2mm 32.5±2.5mm
Surface:1sp or 2sp ,2inch 350±25um,3inch 600±25um,4inch 625±25um,or by customized

2. InP Wafer process step

InP Wafer processing
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Each ingot is cut into wafers which are lapped, polished and surface prepared for epitaxy. The overall process is detailed hereunder.

Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Flat specification and identification The orientation is indicated on the wafers by two flats (long flat for orientation, small flat for identification). Usually the E.J. standard (European-Japanese) is used. The alternate flat configuration (U.S.) is mostly used for Ø 4" wafers.
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Orientation of the boule Either exact (100) or misoriented wafers are offered.
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Accuracy of the orientation of OF In response to the needs of the optoelectronic industry, we offers wafers with excellent accuracy of the OF orientation : < 0.02 degrees. This feature is an important benefit to customers making edge-emitting lasers and also to manufacturers who cleave to separate dies – allowing their designers to reduce the “real-estate” wasted in the streets.
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Edge profile There are two common specs : chemical edge processing or mechanical edge processing (with an edge grinder).
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Polishing Wafers are polished by means of a chemical-mechanical process resulting in a flat, damage-free surface.we provides both double-side polished and single-side polished (with lapped and etched back side) wafers.
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Final surface preparation and packaging Wafers go through many chemical steps to remove the oxide produced during polishing and to create a clean surface with stable and uniform oxide layer that is ready for epitaxial growth - epiready surface and that reduces trace elements to extremely low levels . After final inspection, the wafers are packaged in a way that maintains the surface cleanliness.
Specific instructions for oxide removal are available for all types of epitaxial technologies (MOCVD, MBE).
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Database As part of our Statistical Process Control/Total Quality Management Program, extensive database recording the electrical and mechanical properties for every ingot as well as crystal quality and surface analysis of wafers are available. At each stage of fabrication, the product is inspected before passing to the next stage to maintain a high level of quality consistency from wafer to wafer and from boule to boule.

Sample

Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

QC. standard

Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

Package ＆ delivery

Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

FAQ:

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 5 pcs.

(2) For customized products, the MOQ is 10-30 pcs up.

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T, Paypal, Secure payment and Assurance payment.

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

Q: Do you have standard products?

A: Our standard products in stock.

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications for your optical components based on your needs.

Product tags

indium phosphide wafer

,

what is wafer in semiconductor

,

circuito impreso pcb
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Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

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Product Detail
Brand Name :
zmkj
Model Number :
InP-001
Place of Origin :
CHINA
MOQ :
5pcs
Price :
by case
Supply Ability :
1000pcs/month
Contact Supplier
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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