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4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Specifications
Brand Name :
zmkj
Model Number :
InP-3INCH
Place of Origin :
CHINA
MOQ :
10pcs
Price :
by case
Supply Ability :
1000pcs/month
Delivery Time :
3-4weeks
Packaging Details :
single wafer case
Materials :
InP single crystal
industry :
semiconductor substrates，device，
color :
black
type :
semi- type
diameter :
100mm 4inch
thickness :
625um or 350um
Description

4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer​2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer

InP introduce

InP single crystal
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

growth (modified Czochralski method) is used to pull a single

crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The tCZ technique improves upon the LEC method thanks

to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective

mature technology with high quality reproducibility from boule to boule

Specification

Fe Doped InP

Semi-Insulating InP Specifications

Growth Method VGF
Dopant Iron (FE)
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

Resistivity (Ω.cm) ≥0.5 × 107
Mobility (cm2/V.S) ≥ 1,000
Etch Pitch Density (cm2) 1,500-5,000

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) ≤ 10 ≤ 10 ≤ 10
TTV [P/E] (µm) ≤ 10 ≤ 15 ≤ 15
WARP (µm) ≤ 15 ≤ 15 ≤ 15
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

n- and p-type InP

Semi-conducting InP Specifications

Growth Method VGF
Dopant n-type: S, Sn AND Undoped; p-type: Zn
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

Dopant S & Sn (n-type) Undoped (n-type) Zn (p-type)
Carrier Concentration (cm-3) (0.8-8) × 1018 (1-10) × 1015 (0.8-8) ×1018
Mobility (cm2/V.S.) (1-2.5) × 103 (3-5) × 103 50-100
Etch Pitch Density (cm2) 100-5,000 ≤ 5000 ≤ 500
Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) ≤ 10 ≤ 10 ≤ 10
TTV [P/E] (µm) ≤ 10 ≤ 15 ≤ 15
WARP (µm) ≤ 15 ≤ 15 ≤ 15
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

InP Wafer processing
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Each ingot is cut into wafers which are lapped, polished and surface prepared for epitaxy. The overall process is detailed hereunder.

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Flat specification and identification The orientation is indicated on the wafers by two flats (long flat for orientation, small flat for identification). Usually the E.J. standard (European-Japanese) is used. The alternate flat configuration (U.S.) is mostly used for Ø 4" wafers.
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Orientation of the boule Either exact (100) or misoriented wafers are offered.
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Accuracy of the orientation of OF In response to the needs of the optoelectronic industry, we offers wafers with excellent accuracy of the OF orientation : < 0.02 degrees. This feature is an important benefit to customers making edge-emitting lasers and also to manufacturers who cleave to separate dies – allowing their designers to reduce the “real-estate” wasted in the streets.
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Edge profile There are two common specs : chemical edge processing or mechanical edge processing (with an edge grinder).
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Polishing Wafers are polished by means of a chemical-mechanical process resulting in a flat, damage-free surface. we provides both double-side polished and single-side polished (with lapped and etched back side) wafers.
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Final surface preparation and packaging Wafers go through many chemical steps to remove the oxide produced during polishing and to create a clean surface with stable and uniform oxide layer that is ready for epitaxial growth - epiready surface and that reduces trace elements to extremely low levels . After final inspection, the wafers are packaged in a way that maintains the surface cleanliness.
Specific instructions for oxide removal are available for all types of epitaxial technologies (MOCVD, MBE).
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Database As part of our Statistical Process Control/Total Quality Management Program, extensive database recording the electrical and mechanical properties for every ingot as well as crystal quality and surface analysis of wafers are available. At each stage of fabrication, the product is inspected before passing to the next stage to maintain a high level of quality consistency from wafer to wafer and from boule to boule.

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

Package ＆ delivery

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

FAQ:

Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 5 pcs.

(2) For customized products, the MOQ is 10-30 pcs up.

(3) For customized products,the delivery time in 10days, custiomzed size for 2-3weeks

Product tags

semiconductor laser diode pdf

,

laser diode structure

,

semiconductor diode laser pdf
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4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

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Product Detail
Brand Name :
zmkj
Model Number :
InP-3INCH
Place of Origin :
CHINA
MOQ :
10pcs
Price :
by case
Supply Ability :
1000pcs/month
Contact Supplier
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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