MachineU > China Products > Chemicals > Inorganic Chemicals > Non-Metallic Products > Refractory
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
Specifications
Brand Name :
tankblue
Model Number :
4h-n
Certification :
CE
Place of Origin :
CHINA
MOQ :
3PCS
Price :
by size and grade
Payment Terms :
T/T, Western Union
Supply Ability :
1000pc/month
Delivery Time :
1-4weeks
Packaging Details :
single wafer container box or 25pc cassette box
Materials :
SIC crystal
type :
4h-n
purity :
99.9995%
resistivity :
0.015~0.028ohm.cm
size :
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
thickness :
350um or customized
MPD :
《2cm-2
Application :
for SBD, MOS Device
TTV :
《15um
bow :
《25um
warp :
《45um
Surface :
Si-face CMP, c-face MP
Description

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device

1. Comparison of third-generation semiconductor materials

SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor materials are represented by silicon carbide and gallium nitride. Compared with the previous two generations of semiconductor materials, the biggest advantage is its wide band-free width, which ensures that it can penetrate higher electric field strength and is suitable for preparing high-voltage and high-frequency power devices.

2. Classification

Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

2. Specification for 6inch 4H-N sic wafers .(2inch,3inch 4inch ,8inch sic wafer also is avaiable)

Grade

Zero MPD Production

Grade (Z Grade)

Standard Production Grade (P Grade)

Dummy Grade

(D Grade)
Diameter 99.5 mm~100.0 mm
Thickness 4H-N 350 μm±20 μm 350 μm±25 μm
4H-SI 500 μm±20 μm 500 μm±25 μm
Wafer Orientation Off axis: 4.0°toward <1120 > ±0.5°for 4H-N, On axis: <0001>±0.5°for 4H-SI
Micropipe Density 4H-N ≤0.5cm-2 ≤2 cm-2 ≤15 cm-2
4H-SI ≤1cm-2 ≤5 cm-2 ≤15 cm-2
※ Resistivity 4H-N 0.015~0.025 Ω·cm 0.015~0.028 Ω·cm
4H-SI ≥1E9 Ω·cm ≥1E5 Ω·cm
Primary Flat Orientation {10-10} ±5.0°
Primary Flat Length 32.5 mm±2.0 mm
Secondary Flat Length 18.0 mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90°CW. from Prime flat ±5.0°
Edge Exclusion 3 mm
LTV/TTV/Bow /Warp ≤3 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm

※ Roughness

 Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm

Edge Cracks By High Intensity Light

 None Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light Cumulative area ≤0.05% Cumulative area ≤0.1%
Polytype Areas By High Intensity Light None Cumulative area≤3%
Visual Carbon Inclusions Cumulative area ≤0.05% Cumulative area ≤3%

Silicon Surface Scratches By High Intensity Light

 None Cumulative len`gth≤1×wafer diameter
Edge Chips High By Intensity Light None permitted ≥0.2 mm width and depth 5 allowed, ≤1 mm each

Silicon Surface Contamination By High Intensity

 None
Packaging Multi-wafer Cassette or Single Wafer Container

6inch N-Type SiC Substrates Specifications
Property P-MOS Grade P-SBD Grade D Grade
Crystal Specifications
Crystal Form 4H
Polytype Area None Permitted Area≤5%
(MPD) a ≤0.2 /cm2 ≤0.5 /cm2 ≤5 /cm2
Hex Plates None Permitted Area≤5%
Hexagonal Polycrystal None Permitted
Inclusions a Area≤0.05% Area≤0.05% N/A
Resistivity 0.015Ω•cm—0.025Ω•cm 0.015Ω•cm—0.025Ω•cm 0.014Ω•cm—0.028Ω•cm
(EPD)a ≤4000/cm2 ≤8000/cm2 N/A
(TED)a ≤3000/cm2 ≤6000/cm2 N/A
(BPD)a ≤1000/cm2 ≤2000/cm2 N/A
(TSD)a ≤600/cm2 ≤1000/cm2 N/A
(Stacking Fault) ≤0.5% Area ≤1% Area N/A
Surface Metal Contamination (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Mechanical Specifications
Diameter 150.0 mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5°
Primary Flat Length 47.5 mm ± 1.5 mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation <11-20>±1°
Secondary Flat Orientation N/A
Orthogonal Misorientation ±5.0°
Surface Finish C-Face:Optical Polish,Si-Face:CMP
Wafer Edge Beveling
Surface Roughness
(10μm×10μm) 		Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a 350.0μm± 25.0 μm
LTV(10mm×10mm)a ≤2μm ≤3μm
(TTV)a ≤6μm ≤10μm
(BOW) a ≤15μm ≤25μm ≤40μm
(Warp) a ≤25μm ≤40μm ≤60μm
Surface Specifications
Chips/Indents None Permitted ≥0.5mm Width and Depth Qty.2 ≤1.0 mm Width and Depth
Scratches a
(Si Face,CS8520) 		≤5 and Cumulative Length≤0.5×Wafer Diameter ≤5 and Cumulative Length≤1.5× Wafer Diameter
TUA(2mm*2mm) ≥98% ≥95% N/A
Cracks None Permitted
Contamination None Permitted
Edge Exclusion 3mm

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

2. Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.

ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.

Send your message to this supplier
Send Now

4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

Ask Latest Price
Product Detail
Brand Name :
tankblue
Model Number :
4h-n
Certification :
CE
Place of Origin :
CHINA
MOQ :
3PCS
Price :
by size and grade
Contact Supplier
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Substrate
MachineU China Products Chemicals Inorganic Chemicals Non-Metallic Products Refractory
Contact Supplier
Submit Requirement