4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

Description of HP 4H-semi SIC:

1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials.

2. Semi-insulated 4H-SiC sheet is prepared by high temperature pyrolysis, crystal growth and cutting process.

3. High-purity semi-insulated 4H-SiC sheets have lower carrier concentrations and higher insulation properties.

4. 4H-SiC is a hexagonal lattice. This crystal structure gives 4H-SiC excellent physical and electrical properties.

5. The process requires high purity of raw materials and precision to ensure the silicon wafer a consistent structure.

Features of HP 4H-semi SIC:

The high purity semi-insulated 4H-SiC (silicon carbide) sheet is an ideal semiconductor material:

1. Band gap width: Generally, 4H-SiC has a wide band gap width of about 3.26 electron volts (eV).

2. Due to its thermal stability and insulation properties, 4H-SiC can operate in a wide temperature range.

3. 4H-SiC has a high resistance to radiation used in nuclear energy and high energy physics experiments.

4. 4H-SiC has high hardness and mechanical strength, which makes it have excellent stability and reliability.

5. 4H-SiC has a high electron mobility in the range of 100-800 square centimeters /(volts · second) (cm^2/(V·s).

6. High thermal conductivity: 4H-SiC has a very high thermal conductivity, about 490-530 watts/m-kelle (W/(m·K).

7. High voltage resistance: 4H-SiC has excellent voltage resistance, making it suitable for high voltage applications.

Technical Parameters of HP 4H-semi SIC:

High purity semi-insulated 4H-SiC (silicon carbide) sheets are widely used in many fields:

1. Optoelectronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of optoelectronic devices.

2. Rf and microwave devices: The high electron mobility and low loss characteristics of semi-insulated 4H-SiC.

3. Other fields: Semi-insulated 4H-SiC also has some applications in other fields, such as irradiation detectors.

4. Due to the high thermal conductivity and excellent mechanical strength of 4H-semi SiC in extreme temperature.

5. Power electronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of high-power power devices.

Other related product HP 4-H-semi SIC:

4H-N SIC

FAQ about HPSI 4H-semi SIC:

Q: What is the Brand Name of HPSI 4h-semi SIC?

A: The Brand Name of HPSI 4h-semi SIC is ZMSH.

Q: What is the Certification of HPSI 4h-semi SIC?

A: The Certification of HPSI 4h-semi SIC is ROHS.

Q: Where is the Place of Origin of HPSI 4h-semi SIC?

A: The Place of Origin of HPSI 4h-semi SIC is CHINA.

Q: What is the MOQ of HPSI 4h-semi SIC at one time?

A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.