2’’ InSb-Te EPI Substrates Narrow Band Gap Semiconductor Substrates Hall Components

Description of InSb-Te:

Indium antimonide (InSb), as a kind of group ⅲ-V binary compound semiconductor material, has been the focus of research in the field of semiconductor materials since its discovery with stable physical and chemical properties and excellent process compatibility. InSb has a very narrow band gap, a very small electron effective mass and a very high electron mobility, especially noteworthy is that it belongs to the intrinsic absorption in the spectral range of 3-5 μm, with nearly 100 percent quantum efficiency, making it the preferred material for the preparation of medium-wave infrared detectors, and the application prospect and commercial demand are huge.The lattice structure size of te atom and sb atom is close to each other, and the valence electron shell structure is also close to each other. te atom is doped as a substitute to replace sb in the crystal and plays the role of donor. It was found that the CZ-pull method could be used to prepare insb body materials with a certain te doping concentration, and the addition of te could change the conductive type of insb crystals, and also had an important impact on the electrical and optical properties of the materials. Relevant studies laid the experimental foundation for the spatial growth of Te Doped InSb.

Features of InSb-Te:

Technical Parameters of InSb-Te:

Applicstions of InSb-Te:

1. High-speed electronic devices: tellurium-doped InSb crystals also have potential in high-speed electronic devices.

2. Quantum structure devices: InSb crystals doped with Te can be used to prepare quantum structure devices, such as

quantum Wells and quantum dot devices.

3. Optoelectronic devices: InSb crystals doped with Te can be used to prepare various optoelectronic devices, such as

photodetectors, photoelectric amplifiers and photoelectric converters.

4. Infrared detector: InSb crystals doped with Te can be used to prepare high-performance infrared detectors. Because

tellurium doping can increase the carrier concentration and carrier mobility.

5. Infrared lasers: InSb crystals doped with Te also have application potential in the field of infrared lasers. By introducing

tellurium doping into InSb crystals, the band structure of INSB crystals can realize the work of infrared lasers.

Other Related Product to InSb-Te:

SIC Substrate:

FAQ:

Q: What is the Brand Name of Te-InSb?

A: The Brand Name of Te-InSb is ZMSH.

Q: What is the Certification of Te-InSb?

A: The Certification of Te-InSb is ROHS.

Q: Where is the Place of Origin of Te-InSb?

A: The Place of Origin of Te-InSb is CHINA.

Q: What is the MOQ of Te-InSb at one time?

A: The MOQ of Te-InSb is 25pcs at one time.