MachineU > China Products > Minerals & Metallurgy > Metals & Metal Products > Other Metals & Metal Products
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
Specifications
Brand Name :
zmkj
Model Number :
4H-N
Certification :
rohs
Place of Origin :
china
MOQ :
1pcs
Price :
by qty
Payment Terms :
T/T, Western Union
Supply Ability :
50pcs/months
Delivery Time :
in 45days
Packaging Details :
Packaged in a class 100 clean room environment, in cassettes of single wafer containers
material :
sic crystal
industry :
semiconductor wafer
application :
semiconductor, Led, device, power electronics,5G
color :
blue, green, white
type :
4H-N
GRADE :
Production/research/dummy grade
thickness :
500um
Surface :
DSP
Description

8inch dia200mm 4H-N Production grade dummy grade SiC wafers

Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device,

Application areas

1 high frequency and high power electronic devices Schottky diodes,

JFET, BJT, PiN, diodes, IGBT, MOSFET

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

Advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

Product Name: Silicon carbide (SiC) crystal substrate
Product Description: 2-6inch
Technical parameters:
Cell structure Hexagonal
Lattice constant a = 3.08 Å c = 15.08 Å
Priorities ABCACB (6H)
Growth method MOCVD
Direction Growth axis or Partial (0001) 3.5 °
Polishing Si surface polishing
Bandgap 2.93 eV (indirect)
Conductivity type N or seimi ,high purity
Resistivity 0.076 ohm-cm
Permittivity e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K 5 W / cm. K
Hardness 9.2 Mohs
Specifications: 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A
Standard Packaging: 1000 clean room, 100 clean bag or single box packaging

2. substrates size of standard

8inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Production Grade Research Grade Dummy Grade
Diameter 200.0 mm±0.5 mm
Thickness 500 μm±25μm (or 1000um thickness also can be customzied produce )
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N
Micropipe Density ≤2 cm-2 ≤10cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
Primary Flat and length {1-100}±5.0° ,Notch
Secondary Flat Length none
Secondary Flat Orientation None
Edge exclusion 3 mm
TTV/Bow /Warp ≤10μm /≤25μm /≤30μm// ≤15μm /≤45μm /≤50μm// ≤20μm /≤65μm /≤70μm
Roughness Polish Ra≤5 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm N/A
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤10% Cumulative area ≤30%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None

Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.

3.Pictures of delivery Products before

4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm

4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm

FAQ

Q: What are your main products?

A:semiconductor wafers and Optical lens,mirrors,windows,filters,prisms

Q: How long is your delivery time?

A: In general delivery time is about one month for custom produced optics.except stock ones or some special optics.

Q: Do you provide samples ? is it free or extra ?

A: We can provide free samples if we have stock optics as your request,while custom produced samples are not free.

Q:What is your MOQ ?

MOQ is 10pcs for most of wafer or lens , while MOQ could be only one piece if you need a element in big dimention.

Q: What is your terms of payment ?

T/T,L/C,VISA,Paypal,Alipay or Negotiation.

Product tags

vdk aluminum profile

,

ltcc substrate

,

xccs bosoz premplifier pcb
Send your message to this supplier
Send Now

4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm

Ask Latest Price
Watch Video
Product Detail
Brand Name :
zmkj
Model Number :
4H-N
Certification :
rohs
Place of Origin :
china
MOQ :
1pcs
Price :
by qty
Contact Supplier
video
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm
4H-N Production Grade Dummy Grade SiC Substrate Wafer 8inch Dia200mm

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Substrate
MachineU China Products Minerals & Metallurgy Metals & Metal Products Other Metals & Metal Products
Contact Supplier
Submit Requirement