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Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Specifications
Brand Name :
zmsh
Model Number :
GaAs-2inch-N-type
Certification :
ROHS
Place of Origin :
china
MOQ :
10pcs
Price :
by case
Payment Terms :
Western Union, T/T
Supply Ability :
400pcs/month
Delivery Time :
1-4weeks
Packaging Details :
25pcs casstle in 100-grade cleaning room
material :
GaAs single crystal substrates
industry :
semicondutor wafer
application :
semiconductor substrate, led chip, optical glass window,device substrates
method :
VFG
size :
2INCH
Thickness :
350um
type :
n-TYPE
Orientation :
15° Off
surface :
SSP
Description

VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide substrates

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GaAs) Gallium Arsenide Wafers

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[2]

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.

GaAs Wafer Feature and Application

Feature Application field
High electron mobility Light emitting diodes
High frequency Laser diodes
High conversion efficiency Photovoltaic devices
Low power consumption High Electron Mobility Transistor
Direct band gap Heterojunction Bipolar Transistor

Specification

Undoped GaAs

Semi-Insulating GaAs Specifications

Growth Method VGF
Dopant Carbon
Wafer Shape* Round (DIA: 2", 3", 4", and 6")
Surface Orientation** (100)±0.5°

*5" Wafers available upon request

**Other Orientations maybe available upon request

Resistivity (Ω.cm) ≥1 × 107 ≥1 × 108
Mobility (cm2/V.S) ≥ 5,000 ≥ 4,000
Etch Pitch Density (cm2) 1,500-5,000 1,500-5,000

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3 150±0.3
Thickness (µm) 350±25 625±25 625±25 675±25
TTV [P/P] (µm) ≤ 4 ≤ 4 ≤ 4 ≤ 4
TTV [P/E] (µm) ≤ 10 ≤ 10 ≤ 10 ≤ 10
WARP (µm) ≤10 ≤10 ≤10 ≤5
OF (mm) 17±1 22±1 32.5±1 NOTCH
OF / IF (mm) 7±1 12±1 18±1 N/A
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N TypeSi Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

Product tags

gallium arsenide wafer

,

semiconductor history

,

semiconductor book
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Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type

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Product Detail
Brand Name :
zmsh
Model Number :
GaAs-2inch-N-type
Certification :
ROHS
Place of Origin :
china
MOQ :
10pcs
Price :
by case
Contact Supplier
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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