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6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
Specifications
Brand Name :
ZMSH
Model Number :
6h-n 2inch
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Payment Terms :
T/T, Western Union
Supply Ability :
5000pcs/month
Delivery Time :
2weeks
Packaging Details :
single wafer box
Material :
sic crystal
size :
2inch
thickness :
350um or 330um
surface :
CMP at si-face，c-face mp
color :
transparent
type :
6h-n
resistivity :
0.015~0.028ohm.cm
Ra :
<0.2nm si-face
Description

10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer

2inch 0.33mm 0.43mm 6H-N 4H-N SiC substrates Silicon Carbide sic Wafer

High crystal quality for demanding power electronics

As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade of 4H n -type silicon carbide (SiC) wafers.

Key features

  • Optimizes targeted performance and total cost of ownership for next generation power electronics devices
  • Large diameter wafers for improved economies of scale in semiconductor manufacturing
  • Range of tolerance levels to meet specific device fabrication needs
  • High crystal quality
  • Low defect densities

Sized for improved production

With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

Customized to meet your needs

Our SiC material can be customized to meet the performance and cost requirements of device design needs. We have the capability to produce high quality wafers for next generation devices with low defect densities as low as MPD ≤ 0.1 cm -2, TSD ≤ 400 cm- 2 and BPD ≤ 1,500 cm -2.

Learn more from our technical PDF on 150 mm Silicon Carbide Wafers

Specification
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
3-5×106V/cm
3-5×106V/cm
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s

6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

Related SIC Wafers in stocks:

2inch 330um 4H-N/4H-Semi/6H-Semi sic wafers Dummy grade/ Research grade/ Prodcution grade

3inch 350um 4H-N/4H-Semi HPSI sic wafers Dummy grade/ Research grade/ Prodcution grade

4inch 350um 4H-N/ 500um HPSI 4H-Semi sic wafers Dummy grade/ Research grade/ Prodcution grade

6inch 350um 4H-N/ 500um 4H-Semi sic wafers Dummy grade/ Research grade/ Prodcution grade

Q: What's the way of shipping and cost?

(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it's great.

Q: How to pay?

(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t

Q: What's the deliver time?

(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.

Q: Can I customize the products based on my need?

Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

Product tags

silicon carbide wafer

,

structure of silicon carbide

,

silicon carbide structure
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6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

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Product Detail
Brand Name :
ZMSH
Model Number :
6h-n 2inch
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
3pcs
Price :
by case
Contact Supplier
video
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer
6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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