Specifications
Brand Name :
ZMSH
Model Number :
Crystal Seed SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Payment Terms :
T/T
Supply Ability :
1000pc/month
Delivery Time :
in 30days
Packaging Details :
customzied plastic box
Polytype :
4H
Diameter :
205±0.5mm
Thickness :
600±50μm
Surface orientation error :
4°toward<11-20>±0.5°
Resistivity :
NA
Flat :
None
Packaging :
Multi-wafer cassette
Description

Product Description:

2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Due to its superior properties, silicon carbide seed crystals have become an indispensable material in modern industry and technology.

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade


Features:

  • High hardness: Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool.
  • High thermal conductivity: Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics.
  • Corrosion resistance: Good resistance to chemicals, especially acids and alkalis.
  • High temperature stability: It can still maintain good physical and chemical properties in high temperature environment.
  • Low coefficient of thermal expansion: makes it less susceptible to deformation when temperature changes, making it suitable for precision applications.

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade


Technical Parameter

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade


Applications:

 1. Electronics: Widely used in the manufacture of high-power and high-frequency semiconductor devices, such as MOSFETs and diodes.  2. Abrasives and cutting tools: Used to make sandpaper, grinding stones, and cutting tools.  3. Ceramic materials: used to produce wear-resistant, high-temperature resistant ceramic parts.  4. Optoelectronic devices: Excellent performance in optoelectronic applications such as LEDs and lasers.  5. Thermal management materials: used in heat sinks and thermal interface materials to improve the heat dissipation performance of electronic devices. 

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade


Customization:

Our SiC crystal seed substrate is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2/4/6/8 inch. Place of origin is China.


2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade


FAQ:

1. Q: How to prepare silicon carbide seed crystal 4H type?

A: The preparation of silicon carbide seed crystal 4H type usually involves a complex process, including the selection of appropriate raw materials, fine purification, control of growth conditions, etc. Common preparation methods include physical vapor transfer method (PVT). In the preparation process, it is necessary to ensure that the purity, crystal quality and crystal orientation of the seed crystal meet specific requirements.

2. Q: What is the difference between silicon carbide seed type 4H and 6H?

A: There are differences in the crystal structure between the 4H and 6H types of SIC seed crystals, which leads to differences in their physical and chemical properties. Type 4H SIC seed crystals usually have higher electron mobility and wider bandgap width, which makes it more widely used in high performance power devices. The 6H type SIC seed may show unique advantages in some specific applications, such as the optical field.

Tag: #Sic Crystal Seed Substrate, #4H-N Type, #Silicon Carbide wafer.

Send your message to this supplier
Send Now

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Ask Latest Price
Brand Name :
ZMSH
Model Number :
Crystal Seed SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Contact Supplier
2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade
2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade
2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement