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Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Specifications
Brand Name :
ZMSH
Model Number :
3C-N SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Payment Terms :
T/T
Supply Ability :
1000pc/month
Delivery Time :
in 30days
Packaging Details :
customzied plastic box
Size :
2inch,4inch,6inch,5×5,10×10
Dielectric Constant :
9.7
Surface Hardness :
HV0.3>2500
Density :
3.21 G/cm3
Thermal Expansion Coefficient :
4.5 X 10-6/K
Breakdown Voltage :
5.5 MV/cm
Applications :
Communications, Radar systems
Description

Product Description

Sic 3C-N Type Size Machining Conductive Type for Radar Systems Zero MPD Production Grade

3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as nitrogen (N) and phosphorus (P), which makes the material electronegative and suitable for a variety of electronic device designs. The bandgap is approximately 3.0 eV, making it suitable for high temperature and high voltage applications. N-type doping still maintains high electron mobility, which enhances the performance of the device. Excellent thermal conductivity helps to improve the heat dissipation ability of power devices. It has good mechanical strength and is suitable for use in harsh environments. It has good resistance to a wide range of chemicals and is suitable for industrial applications. In power electronics, it is used in high-efficiency power converters and drives, suitable for electric vehicles and renewable energy systems.

Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

Features

  •  Wide bandgap: Bandgap of approximately 3.0 eV for high temperature and high voltage applications.
  •  High Electron Mobility: N-type doping provides good electron mobility and enhances the overall performance of the device.
  •  Excellent thermal conductivity: It has excellent thermal conductivity and effectively improves heat dissipation performance, suitable for high-power applications.
  •  Good mechanical strength: It has high toughness and compressive strength, and is suitable for use in harsh environments.
  •  Chemical resistance: Good resistance to a wide range of chemicals, enhancing the stability of the material.
  •  Adjustable electrical characteristics: By adjusting the doping concentration, different electrical properties can be achieved to meet the needs of a variety of applications.

Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

Technical Parameter

Propery

 N-type 3C-SiC, Single Crystal
Lattice Parameters a=4.349 Å
Stacking Sequence ABC
Mohs Hardness ≈9.2
Density 2.36 g/cm3
Therm. Expansion Coefficient 3.8×10-6/K
Refraction Index @750nm

n=2.615
Dielectrc Constant c~9.66

Thermal Conductivity

3-5 W/cm·K@298K
Band-Gap 2.36 eV
Break-Down Electrical Field 2-5×106V/cm

Saturation Drift Velocity

 2.7×107m/s

※ Silicon carbide material properties is only for reference.

Applications

 1. Power electronics: for high-efficiency power converters, inverters and drives, widely used in electric vehicles and renewable energy systems.  2. RF & Microwave Equipment: RF amplifiers, microwave equipment, especially suitable for communication and radar systems.  3. Optoelectronics: It can be used as a building block for LEDs and light detectors, especially in blue and ultraviolet applications.  4. Sensors: Applied to a wide range of sensors in high-temperature and high-power environments, providing reliable performance.  5. Wireless Charging and Battery Management: Used in wireless charging systems and battery management devices to improve efficiency and performance.  6. Industrial electrical equipment: Used in industrial automation and control systems to improve energy efficiency and system stability.

Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

Customization

 Our SiC substrate is available in the 3C-N type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 6 inch. Place of origin is China.

Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

FAQ

1. Q: What are the characteristics of 3C-N silicon carbide substrates?

A: The 3C-N type silicon carbide substrate has high electron mobility, which makes the device have smaller FN tunneling current and higher reliability on the oxide preparation, and can greatly improve the product yield of the device. At the same time, 3C-SiC has a smaller band gap width, which also provides advantages for its application in device manufacturing.

2. Q: How does the size of silicon carbide substrate affect its application?

A: The size (diameter and thickness) of the silicon carbide substrate is one of its key indicators. The larger the substrate size, the more chips can be manufactured per unit substrate, and the lower the unit chip cost. At the same time, the large-size substrate is also more conducive to the heat dissipation and stability of the device. At present, silicon carbide substrate is constantly developing in the direction of large size.

3. Q:What is the relationship between 3C-N SIC substrate and epitaxial sheet?

A: 3C-N type silicon carbide substrate is the support layer for epitaxial sheet growth. Epitaxial wafer is a single crystal SiC film grown on the substrate surface by chemical vapor deposition (CVD), and its doping type, doping concentration and thickness can be precisely controlled according to the device design requirements. The quality of the substrate directly affects the growth quality of the epitaxial sheet and the performance of the device.

Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials.

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Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

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Product Detail
Brand Name :
ZMSH
Model Number :
3C-N SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Contact Supplier
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade
Sic 3C-N Type Size Machining Conductive Type For Radar Systems Zero MPD Production Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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