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2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
Specifications
Brand Name :
ZMSH
Model Number :
4H-N
Place of Origin :
China
Price :
by case
Payment Terms :
T/T, Western Union
Supply Ability :
1000pcs/months
Delivery Time :
10-30days
Packaging Details :
Packaged in a class 100 clean room environment, in cassettes of single wafer containers
material :
sic crystal
industry :
semiconductor wafer optical lens
application :
semiconductor, Led, device, power electronics,5G
color :
green
type :
4H-N
size :
2-12INCH
thickness :
350um or 500um
tolerance :
±25um
grade :
Zero/ Production/Research/Dummy
ttv :
<15um
BOW :
<20UM
Warp :
《30um
customzied service :
avaiable
Material :
Silicon Carbide (SiC)
Raw material :
China
Description

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

About SiC wafer

Silicon carbide wafer is a kind of wide band gap semiconductor material. The main application areas of silicon carbide wafers are LED solid lighting and high frequency devices. The material has several times higher than traditional silicon band gap, drift speed, breakdown voltage, thermal conductivity, high temperature resistance and other excellent characteristics, in high temperature, high pressure, high frequency, high power, photoelectric, radiation resistance, microwave and other electronic applications and aerospace, military, nuclear energy and other extreme environment applications have irreplaceable advantages.

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

Properties of SiC wafer

-Breakdown electric field: The breakdown electric field of silicon carbide is about ten times that of silicon, so that silicon carbide devices can work at higher voltages without breakdown due to excessive electric field.

-Thermal conductivity: The thermal conductivity of silicon carbide is three times that of silicon, so that silicon carbide devices can still maintain good heat dissipation performance in high temperature environments.

-Saturated electron migration speed: silicon carbide materials have a higher saturated electron migration speed, making the performance of silicon carbide devices at high frequencies better.

-Working temperature: The working temperature of silicon carbide power devices can reach more than 600 ° C, which is 4 times that of the same silicon devices, and can withstand more extreme working environments.

Other production of our company

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

Growth Techniques of SiC wafer

At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals.

2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

Application of SiC wafer

-Power electronics:

High-frequency switches: in inverters and converters, used in electric vehicles and renewable energy systems.

Power amplifiers: In wireless communications and RF applications, SiC devices are capable of handling high power and high frequency signals.

-Electric drive systems: SiC chips are used in electric vehicle motor control and charging systems to improve energy efficiency and endurance.

-Solar inverter: In solar power generation systems, SiC devices can improve the efficiency of the inverter and reduce energy loss.

-High temperature and high pressure applications: Suitable for devices that need to operate in extreme conditions, such as sensors and electronics in the aerospace, oil and gas industries.

-LED lighting: SiC can be used to manufacture high-brightness leds that provide higher light efficiency and longer service life.

-Power Management: For efficient power conversion and power management systems to improve overall energy efficiency.

-Industrial equipment: In industrial equipment with high power and high temperature environments, SiC devices can improve reliability and performance.

FAQ:

Q: Do you support customization?

A: Yes, we do. We can customize SiC wafer according to your requirements including material, specifications and size.

Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

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2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

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Product Detail
Brand Name :
ZMSH
Model Number :
4H-N
Place of Origin :
China
Price :
by case
Payment Terms :
T/T, Western Union
Supply Ability :
1000pcs/months
Contact Supplier
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials
2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy Grade Rrime Grade High Hardness Semiconductor Materials

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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