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InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
Specifications
Brand Name :
ZMSH
Model Number :
InAs wafer
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
Indium Arsenide
Size :
2inch
Thickness :
500um ±25 um
Orientation :
<100>
Desnity :
5.67 g/cm
Customized :
Supported
Description

2inch Indium Arsenide Wafer InAs Epitaxial Wafer for LD Laser Diode, semiconductor epitaxial wafer, 3inch InAs-Zn wafer, InAs single crystal wafer ​2inch 3inch 4inch InAs-Zn substrates for LD application, semiconductor wafer, Indium Arsenide Laser Epitaxial Wafer

Features of InAs-Zn Wafer


- use InAs wafers to manufacture

- support customized ones with design artwork

- direct bandgap, emits light efficiently, used in lasers.

- in the wavelength range of 1.5μm to 5.6μm, quantum well structures

- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device


Descriptions of InAs-Zn Wafer

Indium arsenide (InAs) is an important semiconductor material that is widely used in fields such as infrared detectors and lasers due to its narrow band gap (about 0.354 eV).
InAs usually exists in the form of a cubic crystal system, and its high electron mobility makes it perform well in high-speed electronic devices.
High-quality InAs wafers can be grown through techniques such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD), which can be used to manufacture efficient infrared detectors, especially in the 3-5 µm and 8-12 µm bands.

In addition, the zinc (Zn) doped InAs structure can adjust its conductivity to form p-type or n-type semiconductors, thereby optimizing its electrical properties.
The development of quantum well and quantum dot structures has further enhanced the application potential of InAs in the optoelectronic field.
Quantum dot technology enables InAs to play an important role in emerging fields such as quantum computing and bioimaging.
With the increasing demand for high-performance infrared devices and quantum technologies, the research and application prospects of InAs and its doped materials are broad.


Details of InAs-Zn Wafer

parameterInAs-ZnWafer
Material compositionIndium Arsenic (InAs) +Zinc doping
Crystal structureCubic system (zinc blende structure)
Bandwidth~0.354 eV
Electron mobility~30,000 cm²/V·s
Hole mobility~200 cm²/V·s
density~5.67 g/cm³
Melting point~942 °C
Thermal conductivity~0.5 W/m·K
Optical band gap~0.354 eV
Doping methodP Type doping (via zinc)
Application AreasInfrared lasers, detectors, quantum dots
SizeDia 2inch
Thickness500um ±25um
Orientation<100>



Samples of InAs-Zn Wafer
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> CustomizedInAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized'InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized
*Please feel free to contact us if you have the customized requirements.


About us

Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
We wrap the wafer with opaque aluminium packaging and put them in small boxes to protect them.
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> CustomizedInAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized

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InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized


FAQ
1. Q: What about the cost of InAs-Zn wafers compared with other wafers?
A: InAs-Zn wafers are typically more expensive than silicon and GaAs wafers due to material scarcity, complex manufacturing processes, and specialized market demand.

2. Q: What about the future prospects of InAs-Zn wafers?
A: The future prospects of InAs wafers are quite promising.











































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InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um <100> Customized

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Product Detail
Brand Name :
ZMSH
Model Number :
InAs wafer
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
Indium Arsenide
Contact Supplier
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized
InAs Wafer Doped Zn 2 Inch Indium Arsenide Wafer Dia 50mm Thickness 500um Customized

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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