Features of GaAs Laser Epitaxial Wafer

- use GaAs wafers to manufacture

- support customized ones with design artwork

- direct bandgap, emits light efficiently, used in lasers.

- in the wavelength range of 0.7μm to 0.9μm, quantum well structures

- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device

Description of GaAs Laser Epitaxial wafer

Gallium arsenide (GaAs) epitaxial wafer is an important semiconductor material, widely used in optoelectronics and high-frequency electronic devices.

It is grown on a gallium arsenide substrate through epitaxial growth technology and has excellent optoelectronic properties.

The direct bandgap characteristics of GaAs make it particularly prominent in light-emitting diodes (LEDs) and laser diodes (LDs), which can emit light efficiently and are suitable for optical communications and display technologies.

Compared with silicon, GaAs has higher electron mobility and can support faster switching speeds, which is particularly suitable for radio frequency (RF) and microwave devices.

In addition, GaAs epitaxial wafers show good stability and low noise characteristics in high-temperature environments, making them suitable for various high-power and high-frequency applications.

During the manufacturing process, commonly used epitaxial growth technologies include metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), which ensure the high quality and uniformity of the epitaxial layer.

After manufacturing, the GaAs epitaxial wafer undergoes processes such as etching, metallization and packaging to finally form high-performance electronic and optoelectronic devices.

With the advancement of science and technology, the application fields of GaAs epitaxial wafers continue to expand, especially in the fields of optical communications, solar cells and sensors, showing broad market prospects.

More about GaAs Laser Epitaxial wafer

As a leading supplier of GaAs substrates, ZMSH specializes in manufacturing Epi-ready Gallium Arsenide (GaAs) wafer substrates.

We offer a variety of types, including semi-conducting n-type, C-doped, and p-type wafers in both prime and dummy grades.

The resistivity of our GaAs substrates varies based on the dopants used: silicon-doped or zinc-doped wafers have a resistivity range of (0.001–0.009) ohm·cm, while carbon-doped wafers have a resistivity of ≥ 1 × 10^7 ohm·cm.

Our GaAs wafers are available in crystal orientations of (100) and (111), with (100) orientation tolerances of 2°, 6°, or 15° off.

The etch pit density (EPD) for our GaAs wafers is typically <5000/cm² for LED applications and <500/cm² for laser diodes (LD) and microelectronics.

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FAQ

1. Q: What about the cost GaAs laser epitaxial wafers compared with other wafers?

A: GaAs laser epitaxial wafers tend to be more expensive than silicon wafers and some other semiconductor materials.

2. Q: What about the future prospect of GaAs laser epitaxial wafers?
A: The future prospects of GaAs laser epitaxial wafers are quite promising.