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SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
Specifications
Brand Name :
ZMSH
Model Number :
SiC Ceramic Trays
Certification :
rohs
Place of Origin :
CHINA
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Product Name :
Silicone Carbide Tray
Material :
Silicone Carbide Ceramic
Color :
Blank
Purity :
99.999%
Tolerance :
±0.001mm
Application :
Epitaxial Growth Processing
Size :
Customized Size
Description

Product Description

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process Use For Epitaxial Growth Processing

Non-oxide ceramic, silicon carbide ceramic (SiC) is a superhard material with a hardness of up to 9.5 on the Mohs scale. Silicon carbide ceramics not only have excellent mechanical properties at room temperature, such as high flexural strength, excellent oxidation resistance, good corrosion resistance, high wear resistance and low friction coefficient, but also have excellent mechanical properties (strength, creep resistance) at high temperatures, and its high-temperature strength can be maintained to 1600 °C, which is the best among all ceramic materials. The oxidation resistance of silicon carbide ceramics is also the best among all non-oxide ceramics.

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Features

- Avoid peeling and make sure all surfaces are coated

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: Made by CVD chemical vapor deposition under high temperature chlorination conditions.

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth ProcessingSiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Corrosion resistance: high hardness, dense surface, fine particles.

Corrosion resistance: resistant to acids, alkalis, salts and organic reagents.

- Achieve optimal laminar airflow patterns

- Ensures uniform heat distribution

- Prevents contamination or spread of impurities

Technical Parameters

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Applications

- Mechanical seal rings

- Valve balls, seats, bushings

- Kiln furniture

- heat exchanger

- Fixing and moving turbine components

- Grinding medium

- Military bulletproof inserts

- Burner parts

- Ceramic bearings

SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth ProcessingSiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

Our services

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ

1. Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.

2. Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

3. Q: What's the way of shipping and cost?
A: (1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.

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SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

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Product Detail
Brand Name :
ZMSH
Model Number :
SiC Ceramic Trays
Certification :
rohs
Place of Origin :
CHINA
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Contact Supplier
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing
SiC Silicon Carbide Ceramic Trays Plate Wafer Holder ICP Etching Process For Epitaxial Growth Processing

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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