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4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
Specifications
Brand Name :
ZMSH
Model Number :
SiC Substrate
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
SiC Single Crystal
Dia :
50.8 mm ± 0.38 mm
Grade :
P grade or D grade
Thickness :
350 um or 500 um
Orientation :
On axis: <0001> +/- 0.5 deg
Resistivity :
≥1E5 Ω·cm
Description

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type

About 4H-SEMI SiC4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

  • use SIC Monocrystal to make

  • support customized ones with design artwork

  • high-quality, suitable for high-performance applications

  • high hardness, about 9.2 Mohs

  • widely used in high-tech areas, like power electronics, automotive electronics and RF devices

​

Description of 4H-SEMI SiC

Silicon Carbide (SiC) is a versatile semiconductor renowned for its performance in high-power and high-frequency applications.

Its wide bandgap enables efficient operation at high voltages and temperatures, making it suitable for power electronics, RF devices, and harsh environments.

SiC is integral to industries such as automotive and energy due to its reliability and efficiency.

Advanced manufacturing methods, like Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), ensure high-quality, durable components.

4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

SiC's unique properties also make it ideal for short-wavelength optoelectronics, high-temperature environments, radiation resistance, and demanding electronic systems.

ZMSH offers a range of SiC wafers, including 6H and 4H types, no matter N type, SEMI type or HPSI type, ensuring high quality, stable supply, and cost-effectiveness through large-scale production processes.

Features of 4H-SEMI SiC

4-inch Diameter 4H Semi-insulating Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY Production Grade Dummy Grade
Diameter 50.8.0 mm +0.0/-0.38 mm
Surface Orientation on-axis: {0001} ± 0.2°
Primary Flat Orientation <11-20> ± 5.0˚
Secondary Flat Orientation 90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length 32.5 mm ± 2.0 mm
Secondary Flat Length 18.0 mm ± 2.0 mm
Wafer Edge Chamfer
Micropipe Density ≤5 micropipes/cm2 ≤50 micropipes/cm2
Polytype Areas by High-Intensity Light None permitted ≤10% area
Resistivity 0.015~0.028Ω·cm (area 75%)
0.015~0.028Ω·cm
Thickness 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV ≤10 μm ≤15 μm
BOW (absolute value) ≤25 μm ≤30 μm
Warp ≤45 μm
Surface Finish Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness CMP Si Face Ra≤0.5 nm N/A
Cracks by high-intensity light None permitted
Edge Chips/Indents by Diffuse Lighting None permitted Qty.2 <1.0 mm width and depth
Total Usable Area ≥90% N/A
Note: Customerized specifications other than the above parameters are acceptable.

More samples of 4H-SEMI SiC

4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

*Please feel free to contact us if you have customized demands.

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4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

2.4H-N Silicon Carbide SiC Substrate 8 inch Thickness 350um 500um P grade D grade SiC wafer

4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

FAQ

1. Q: How does 4H-SiC Semi ensure the quality of its wafers?

A: 4H-SiC Semi employs advanced manufacturing techniques, including Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), and follows stringent quality control processes to ensure high-quality wafers.

2. Q: What's the main difference between 4H-N SiC and 4H-SEMI SiC

A: The primary difference between 4H-N SiC and 4H-SEMI SiC is that 4H-N SiC (Nitrogen-doped) is n-type semiconductor silicon carbide, whereas 4H-Semi SiC is semi-insulating silicon carbide, which has been processed to have very high resistivity.

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4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

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Product Detail
Brand Name :
ZMSH
Model Number :
SiC Substrate
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
SiC Single Crystal
Contact Supplier
video
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer
4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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