MachineU > China Products > Chemicals
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
Specifications
Brand Name :
ZMSH
Model Number :
GaN-on-Si Wafers
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
GaN layer on Si substrate
Size :
4inch, 6inch 8inch
Orientation :
<111>
Thickness :
500um/ 650um
Hardness :
9.0 Mohs
Customization :
Support
Description

GaN on Si Compound Wafer, Si wafer, Silicon Wafer, Compound Wafer, GaN on Si Substrate, Silicon Carbide Substrate, 4inch, 6inch, 8inch, Gallium Nitride (GaN) layer on Silicon (Si) substrate

Features of GaN on Si wafer

4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
  • use GaN on Si compound wafers to manufacture

  • support customized ones with design artwork

  • high-quality, suitable for high-performance applications

  • high hardness and high efficiency, with high power density

  • widely used in power electricity, RF devices, 5G and beyond, etc.

More about GaN on Si wafer

GaN-on-Si is a semiconductor material that combines the advantages of gallium nitride (GaN) and silicon (Si).

GaN has the characteristics of wide bandgap, high electron mobility and high-temperature resistance, which makes it have significant advantage in high-frequency and high-power applications.

However, traditional GaN devices are usually based on expensive substrate materials such as sapphire or silicon carbide.

In contrast, GaN-on-Si uses lower-cost and larger silicon wafers as substrates, greatly reducing production costs and improving compatibility with existing silicon-based processes.

This material is widely used in power electronics, RF devices and optoelectronics.

For example, GaN-on-Si devices have shown excellent performance in power management, wireless communications and solid-state lighting.

In addition, with the advancement of manufacturing technology, GaN-on-Si is expected to replace traditional silicon-based devices in a wider range of applications, promoting the further miniaturization and efficiency of electronic devices.

Further details of GaN on Si wafer

Parameter Category parameter Value/Range Remark
Material properties GaN Bandgap Width 3.4 eV Wide bandgap semiconductor, suitable for high temperature, high voltage and high frequency applications
Silicon (Si) bandgap width 1.12 eV Silicon as substrate material provides better cost-effectiveness
Thermal conductivity 130-170 W/m·K The thermal conductivity of the GaN layer and the silicon substrate is about 149 W/m·K
Electron mobility 1000-2000 cm²/V·s The electron mobility of the GaN layer is higher than that of silicon
Dielectric constant 9.5 (GaN), 11.9 (Si) Dielectric Constants of GaN and Silicon
Coefficient of thermal expansion 5.6 ppm/°C (GaN), 2.6 ppm/°C (Si) The thermal expansion coefficients of GaN and silicon do not match, which can cause stress
Lattice constant 3.189 Å (GaN), 5.431 Å (Si) The lattice constants of GaN and Si are not matched, which may lead to dislocations
Dislocation density 10⁸-10⁹ cm⁻² Typical dislocation density of a GaN layer, depending on the epitaxial growth process
Mechanical hardness 9 Mohs Gallium nitride's mechanical hardness provides wear resistance and durability
Wafer specifications Wafer diameter 2 inches, 4 inches, 6 inches, 8 inches Common GaN-on-Si wafer sizes
GaN layer thickness 1-10 µm Depends on specific application requirements
Substrate thickness 500-725 µm Typical thickness of silicon substrate, supporting mechanical strength
Surface roughness < 1 nm RMS The roughness of the surface after polishing ensures high-quality epitaxial growth
Step height < 2 nm The step height of the GaN layer affects device performance
Warpage < 50 µm The warpage of the wafer affects the compatibility of the manufacturing process
Electrical properties Electron concentration 10¹⁶-10¹⁹ cm⁻³ n-type or p-type doping concentration of GaN layer
Resistivity 10⁻³-10⁻² Ω·cm Typical resistivity of GaN layers
Breakdown electric field 3 MV/cm The high breakdown electric field strength of the GaN layer is suitable for high voltage devices
Optical performance Emission wavelength 365-405 nm (UV/blue light) The emission wavelength of GaN materials, used in optoelectronic devices such as LEDs and lasers
Absorption coefficient ~10⁴ cm⁻¹ Absorption coefficient of GaN material in the visible light range
Thermal properties Thermal conductivity 130-170 W/m·K The thermal conductivity of the GaN layer and the silicon substrate is about 149 W/m·K
Coefficient of thermal expansion 5.6 ppm/°C (GaN), 2.6 ppm/°C (Si) The thermal expansion coefficients of GaN and silicon do not match, which can cause stress
Chemical properties Chemical stability high Gallium nitride has good corrosion resistance and is suitable for harsh environments
Surface treatment Dust-free and pollution-free Cleanliness requirements for GaN wafer surface
Mechanical properties Mechanical hardness 9 Mohs Gallium nitride's mechanical hardness provides wear resistance and durability
Young's modulus 350 GPa (GaN), 130 GPa (Si) Young's modulus of GaN and silicon, affecting the mechanical properties of the device
Production parameters Epitaxial growth method MOCVD, HVPE, MBE Common methods for epitaxial growth of GaN layers
Yield Depends on process control and wafer size Yield rate is affected by factors such as dislocation density and warpage
Growth temperature 1000-1200°C Typical temperatures for epitaxial growth of GaN layers
Cooling rate Controlled cooling To prevent thermal stress and warping, the cooling rate is usually controlled

Samples of GaN on Si wafer

4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

*Meanwhile, if you have any further requirements, please feel free to contact us to customize one.

About us and the packaging box
About us
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
About packaging box
Devoting to assisting our customers, we use wafer foam plastic to package.
Here are some pictures of these.
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

Similar product recommendations

1.4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application

4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

2.2" 3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm

4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

FAQ

1. Q: What about the cost of GaN on Si wafers compared with other wafers?

A: Compared with other substrate materials such as silicon carbide (SiC) or sapphire (Al2O3), silicon-based GaN wafers have obvious cost advantages, especially in the manufacture of large-size wafers.

2. Q: What about the future prospect of GaN on Si wafers?
A: GaN on Si wafers are gradually replacing traditional silicon-based technology due to their superior electronic performance and cost-effectiveness, and are playing an increasingly important role in many of the above fields.

Send your message to this supplier
Send Now

4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

Ask Latest Price
Product Detail
Brand Name :
ZMSH
Model Number :
GaN-on-Si Wafers
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
GaN layer on Si substrate
Contact Supplier
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED
4inch GaN-on-Si Wafers Gallium Nitride Wafer Epi-wafer 6inch 8inch Hardness 9.0 Mohs For Power RF LED

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More
Watch related videos

Find Similar Products By Category:

Supplier Homepage Products Gallium Nitride Wafer
MachineU China Products Chemicals
Contact Supplier
Submit Requirement