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Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Specifications
Brand Name :
ZMSH
Model Number :
SiC on Si Compound Wafe
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Substrate :
Silicon
Epitaxial Layer :
Silicon Carbide
Electrical Properties :
Semi-insulating
Diameter: :
4inch 6inch or lagrger
Thickness :
500um/ 625um/ 675um
Customized :
Support
Description

Semi-insulating SiC on Si Compound Wafer , Si wafer, Silicon Wafer, Compound Wafer, SiC on Si Compound Substrate, Silicon Carbide Substrate, P Grade, D Grade, 4inch, 6inch, 4H-SEMI

Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

About Compound wafer

  • use SiC on Si compound wafer to manufacture

  • support customized ones with design artwork

  • high-quality, suitable for high-performance applications

  • high hardness and durability, high thermal conductivity

  • widely used in high-voltage and high-frequency devices, RF devices, etc.

More of Compound wafer

​Semi-insulating SiC on Si Compound Wafer is a high-performance advanced semiconductor material.

It has the advantages of both silicon substrate and semi-insulating silicon carbide substrate.

It has excellent thermal conductivity and outstanding high mechanical strength.

It can significantly reduce low leakage current under high temperature and high-frequency conditions and effectively improve device performance.

It is an excellent semiconductor material.

It is usually used in power electronics, radio frequency, and optoelectronic devices, especially in high-demand applications requiring excellent heat dissipation and electrical stability.

Although its production cost is relatively high compared to silicon wafers and silicon carbide wafers, it has attracted more and more attention and favour in high-performance technology due to its advantages in improving device efficiency and stability reliability.

Therefore, semi-insulating SiC on Si composite wafers has broad development prospects in future high-end technology applications.

Details of Compound wafer

Item Specification
Diameter 150 ± 0.2 mm
SiC Polytype 4H
SiC Resistivity ≥1E8 Ω·cm
Transfer SiC layer Thickness ≥0.1 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm)
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
Si Orientation <111>/<100>/<110>
Si Type P/N
Flat/Notch Flat/Notch
Edge Chip, Scratch, Crack (visual inspection) None
TTV ≤5 μm
Thickness 500/625/675 ± 25 μm

Other pictures of Compound wafer

Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

*Please feel free to contact us if you have customized demands.

About us and the packaging box
About us
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
About packaging box
Devoting to assisting our customers, we use wafer foam plastic to package.
Here are some pictures of these.
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

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Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

FAQ

1. Q: What is the common surface orientation of SiC on Si wafers?

A: The common orientation is (111) for SiC, aligned with the silicon substrate.

2. Q: Are there specific annealing requirements for SiC on Si wafers?
A: Yes, high-temperature annealing is often required to improve material properties and reduce defects.

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Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

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Product Detail
Brand Name :
ZMSH
Model Number :
SiC on Si Compound Wafe
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Substrate :
Silicon
Contact Supplier
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um
Semi-insulating SiC on Si Compound Wafer 4H-SEMI substrate P type N type Thickness 500um

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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