Specifications
Brand Name :
ZMSH
Model Number :
SiC Substrate
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
SiC Single Crystal
Type :
N type
Grade :
Prime / Dummy Grade
Density :
3.2 G/cm3
Size :
5mm*5mm
Orientation :
<1120>
Description

Semi-insulating SiC on Si Compound Wafer, SiC wafer, Silicon Carbide Wafer, Compound Wafer, SiC on Si Compound Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, Square SiC, 2inch, 4inch, 6inch, 8inch, 12inch 4H-N, 6H-N, 4H-SEMI


4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade

The Character of 4H-N SiC

- support customized ones with design artwork

- use SiC Monocrystal to make (Silicon Carbide Single Crystal)

- high performance, high hardness 9.2, wear-resistant

- Exceptional performance, wide bandgap and high electron mobility

-Widely used in technology sectors such as power electronics, LEDs, sensors, etc.


The Description of 4H-N SiC

SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.

4H-N SiC is a silicon carbide material that belongs to the 4H crystal structure in the silicon carbide polytype.

Its "N" represents that it is an N-type semiconductor material with electronic conductivity.

The 4H structure is a four-layer stacked hexagonal crystal arrangement.

With this unique crystal structure, its application in high-power and high-frequency electronic devices is very prominent.


4H-N SiC has a wide bandgap (about 3.26 eV) and can still operate stably at high temperatures, making it suitable for electronic devices in extreme environments.

Its wide bandgap brings good thermal stability and excellent radiation resistance, especially suitable for occasions such as aerospace and nuclear energy that require extremely high material stability.


In addition, 4H-N SiC has higher electron mobility and higher breakdown electric field strength, so it is widely used in power semiconductors, radio frequency devices, and high-efficiency energy and electronic devices such as electric vehicles.

Its excellent physical properties make it a key material for future high-efficiency electronic systems, which can significantly improve efficiency and performance.


The Details of 4H-N SiC

Grade Production Grade Dummy Grade
Diameter 150.0 mm +/- 0.2 mm
Thickness 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N
Wafer Orientation On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
Micropipe Density (MPD) 5 cm-2 30 cm-2
Doping Concentration N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3
Primary Flat (N-type) {10-10} +/- 5.0 deg
Primary Flat Length (N-type) 47.5 mm +/- 2.0 mm
Notch (Semi-Insulating type) Notch
Edge exclusion 3 mm
TTV /Bow /Warp 15um /40um /60um
Surface Roughness Polish Ra 1 nm
CMP Ra 0.5 nm on the Si face


More samples of 4H-N SiC

*This is the 2inch one.

4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade


About us and the packaging box

About us
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
About packaging box
Devoting to assisting our customers, we use wafer box to package.
We have 2inch, 3inch, 4inch, 6inch, 8inch and 12inch box.
*Here are some pictures of these.
4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade

Products Recommend

1.4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime grade Dummy grade

4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade

2.4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade


FAQ

1.Q: Can I use 4H-N SiC personally?

A: Yes, you can use 4H-N SiC personally, but ensure you have the necessary knowledge, equipment, and budget to handle and apply it safely.

2.Q: What is the future prospect of 4H-N SiC

A: The future prospect of 4H-N SiC is promising, with increasing demand in high-power electronics, electric vehicles, and next-generation semiconductor technologies due to its superior electrical and thermal properties.

Send your message to this supplier
Send Now

4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade

Ask Latest Price
Brand Name :
ZMSH
Model Number :
SiC Substrate
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Material :
SiC Single Crystal
Contact Supplier
4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade
4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade
4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade
4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm Customized Thickness 350um Prime Grade/ Dummy Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement