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4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
Specifications
Brand Name :
ZMSH
Model Number :
Si wafer
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
4-6 weeks
Material :
Si single crystal
Size :
4 inch
Thickness :
350 um
Crystal Orientation :
<100>
Density :
2.4 g/cm3
Doping Type :
P type or N type
Description

Si wafer, Silicon Wafer, Si Substrate, Silicon Substrate, <100>, <110>, <111>, 1inch Si wafer, 2inch Si wafer, 3inch Si wafer, 4inch Si wafer, Si monocrystalline substrate, Silicon monocrystalline wafer

4inch Si wafer Dia 100mm Thickness 350um Orientation <100> DSP SSP Customized Silicon Wafers N type P type

Character of the Si wafer

- use Silicon Monocrystals to make, with high purity, 99.999%

- support customized ones with design artwork

- resistivity varies greatly by the doped type

- can be either P-type (with boron) or N-type (with phosphorus or arsenic)

- widely used in high-tech areas, like ICs, photovoltaics and MEMS devices

Description of the Si wafer

Silicon wafers are thin, flat disks made from highly purified single-crystal silicon and are widely used in the semiconductor industry.

These wafers are the basic substrate for manufacturing integrated circuits and a variety of electronic devices.

Silicon wafers typically range from 2 inches (50 mm) to 12 inches (300 mm) in diameter, and their thickness varies depending on size, typically between 200 µm and 775 µm.

Silicon wafers are manufactured using the Czochralski or Float-Zone methods and are carefully polished to obtain a mirror surface with minimal roughness. They can be doped with elements such as boron (P-type) or phosphorus (N-type) to modify their electrical properties.

Key properties include high thermal conductivity, low coefficient of thermal expansion, and excellent mechanical strength.

Wafers can also have epitaxial layers or thin silicon dioxide layers to enhance electrical properties and insulation.

They are processed and handled in a cleanroom environment to maintain purity, ensuring high yield and reliability in semiconductor manufacturing.

More about the Si wafer

Growth method Czochralski(CZ), floating zone(FZ)
Crystal structure Cubic
Band gap 1.12 eV
Density 2.4 g/cm3
Melting point 1420℃
Dopant type Undoped Boron-doped Phos-doped / As-doped
ConductiveType Intrinsic P-type N-type
Resistivity >1000 Ωcm 0.001~100 Ωcm 0.001~100 Ωcm
EPD <100 /cm2 <100/cm2 <100/cm2
Oxygen content ≤1x1018 /cm3
Carbon content ≤5x1016 /cm3
Thickness 150um, 200um, 350um, 500um or others
Polishing Single-side polished or Double-side polished
Crystal orientation <100>, <110>, <111> ±0.5º or other off-angle
Surface roughness Ra≤5Å(5µmx5µm)

Samples of the Si wafer

4inch Si wafer Dia 100mm Thickness 350um Orientation <100> DSP SSP Customized Silicon Wafers N type P type

*If you have any other requirements, please feel free to contact us to customize one.

About us and the packaging box
About us
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
About packaging box
Devoting to assisting our customers, we use wafer foam plastic to package.
Here are some pictures of these.
4inch Si wafer Dia 100mm Thickness 350um Orientation <100> DSP SSP Customized Silicon Wafers N type P type

FAQ

1. Q: What difference between P-type and N-type of Si wafers?

A: P-type silicon wafers have holes as the main charge carriers, while N-type wafers have electrons, with minimal differences in other physical properties like resistivity.

2. Q: Si wafer, SiO2 wafer and SiC wafer, what are the main differences of them?

A: Silicon (Si) wafers are pure silicon substrates used primarily in semiconductor devices,

SiO₂ wafers have a silicon dioxide layer on the surface, often used as an insulating layer.

Silicon carbide (SiC) wafers are composed of a compound of silicon and carbon, offering higher thermal conductivity and durability, making them suitable for high-power and high-temperature applications.

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4inch Si wafer Dia 100mm Thickness 350um Orientation <100> DSP SSP Customized Silicon Wafers N type P type

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Product Detail
Brand Name :
ZMSH
Model Number :
Si wafer
Place of Origin :
China
Payment Terms :
T/T
Delivery Time :
4-6 weeks
Material :
Si single crystal
Contact Supplier
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type
4inch Si wafer Dia 100mm Thickness 350um Orientation DSP SSP Customized Silicon Wafers N type P type

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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