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Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Specifications
Brand Name :
ZMSH
Model Number :
SiC 6H-P
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Supply Ability :
1000pc/month
Polytype :
6H-P
Density :
3.0 g/cm3
Resistivity :
≤0.1 Ω.cm
Surface Orientation :
Off axis: 2.0° toward [110] ± 0.5°
Roughness :
Polish Ra≤1 nm
Edge Exclusion :
3 mm
Packaging :
Multi-wafer Cassette or Single Wafer Container
Application :
Microwave amplifier, antenna
Description

Product Description:Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

Silicon carbide wafer Sic 6H-P type Off axis: 2.0° toward Production Grade Research Grade


Type 6H-P Sic is made of advanced semiconductor material preparation process with specific crystal structure and doping type. Among them, "6H" represents the crystal structure type of silicon carbide, which belongs to a hexagonal crystal system; "P-type" indicates that the substrate is doped so that the holes become the main carrier type. The design with an off-axis Angle of 2.0° helps to optimize the performance of the crystal in a specific direction to meet the needs of specific application scenarios.

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

Features:

​1. High doping concentration: 6H-P type Sic achieves a high concentration of hole carrier distribution through a specific doping process, which helps to improve the electrical conductivity and switching speed of the device.

2. Low resistivity: Due to the high doping concentration, the substrate exhibits low resistivity, which helps to reduce the energy loss of the device during operation.

3. Good thermal stability: Sic material itself has a very high melting point, making 6H-P substrate can maintain stable performance in high temperature environment.

4. Excellent mechanical properties: Sic material has high hardness, wear resistance and other characteristics, making 6H-P substrate can withstand greater mechanical stress in the manufacturing process.

5. Off-axis Angle optimization: The design of the off-axis Angle is 2.0°, so that the performance of the substrate is optimized in a specific direction, which helps to improve the overall performance of the device.

Technical Parameter:

2 inch diameter Silicon Carbide (SiC) Substrate Specification

等级 Grade

工业级

Production Grade

(P Grade)

研究级

Research Grade

(R Grade)

试片级

Dummy Grade

(D Grade)
直径 Diameter 50.8mm±0.38mm
厚度 Thickness 350 μm±25 μm
晶片方向 Wafer Orientation Off axis: 2.0°-4.0°toward [112(-)0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
微管密度 Micropipe Density 0 cm-2
电阻率 ※Resistivity 4H/6H-P ≤0.1 Ω.cm
3C-N ≤0.8 mΩ•cm
主定位边方向 Primary Flat Orientation 4H/6H-P {10-10} ±5.0°
3C-N {1-10} ±5.0°
主定位边长度 Primary Flat Length 15.9 mm ±1.7 mm
次定位边长度 Secondary Flat Length 8.0 mm ±1.7 mm
次定位边方向 Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
边缘去除 Edge Exclusion 3 mm 3 mm
总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm
表面粗糙度※ Roughness Polish Ra≤1 nm
CMP Ra≤0.2 nm
边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light None 1 allowed, ≤1 mm
六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light Cumulative area≤1 % Cumulative area≤3 %
多型(强光灯观测) ※ Polytype Areas By High Intensity Light None Cumulative area≤2 % Cumulative area≤5%

Si 面划痕(强光灯观测)#

Silicon Surface Scratches By High Intensity Light

3 scratches to 1×wafer

diameter cumulative length

5 scratches to 1×wafer

diameter cumulative length

 8 scratches to 1×wafer diameter cumulative length
崩边(强光灯观测) Edge Chips High By Intensity Light light None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each

硅面污染物(强光灯观测)

Silicon Surface Contamination By High Intensity

 None
包装 Packaging Multi-wafer Cassette or Single Wafer Container

Notes:

※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

Applications:

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

  • Power devices: Type 3C-N SiC substrates are widely used in voltage-controlled silicon carbide MOSFET devices, especially in the field of medium voltage (below 1200 V).

  • High frequency communication equipment: Because of its excellent high frequency performance, type 3C-N SiC is used as the core material of high frequency communication equipment.

  • Power electronics: Type 3C-N SiC substrates are suitable for the field of power electronics, especially in power conversion equipment with high performance and high reliability.

  • Aerospace and Military: With its high strength and high temperature resistance, type 3C-N SiC is used in aerospace and military equipment.

​

  • Medical equipment: Its corrosion resistance and high precision make it also a potential application in medical devices.

Sample display:

Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research GradeSilicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

FAQ:

1. Q: What is Sic 6H-P off-axis to 2.0°?

A: Sic 6H-P off-axis to 2.0° refers to a P-type silicon carbide material with a 6H crystal structure, and its cutting direction deviates from the crystal spindle by 2.0°. This design is designed to optimize specific properties of silicon carbide materials, such as increasing carrier mobility and reducing defect density, to meet the manufacturing needs of high-performance semiconductor devices.

2. Q: What is the difference between P-type and N-type silicon wafers?

A: The main difference between P-type silicon wafers and N-type silicon wafers is that the doping elements are different, P-type boron and N-type phosphorus, resulting in their electrical conductivity and physical properties are different.



Tag: #Sic wafer, #silicon carbide substrate, #Sic 6H-P type, #Off axis: 2.0° toward, #Mohs Hardness 9.2

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Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

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Product Detail
Brand Name :
ZMSH
Model Number :
SiC 6H-P
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Contact Supplier
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade
Silicon Carbide Wafer Sic 6H-P Type Off Axis 2.0° Toward Production Grade Research Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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