The 12inch silicon carbide substrate is an important innovation in the semiconductor industry, with dimensions up to 300 mm, much larger than traditional 6 or 8inch substrates. This increase in size means that more chips can be made on a single wafer, significantly increasing production efficiency and reducing unit costs.

12inch silicon carbide (SiC) substrate is an important substrate for wide band gap semiconductor materials and has significant physical and chemical properties. With a band gap of 3.2eV, high thermal conductivity and strong breakdown electric field strength, it performs well in high temperature, high pressure and high frequency environments. In addition, the 12inch silicon carbide substrate improves chip manufacturing efficiency and reduces unit costs by expanding the single wafer area, making it possible for large-scale applications.

Features:

Physical characteristics:

• Wide bandgap characteristics: Silicon carbide has a wide bandgap width, about 3.26 eV (4H-SiC) or 3.02 eV (6H-SiC), much higher than silicon's 1.1 eV. This allows silicon carbide to work at extremely high electric field strength and withstand large heat, and is not prone to thermal collapse or breakdown.

• High breakdown electric field: The high breakdown electric field of silicon carbide is about 10 times that of silicon, so that it can work stably at high voltage, suitable for high power density and high efficiency power electronic systems.

• High temperature resistance: Silicon carbide has high thermal conductivity and high temperature resistance, and the operating temperature range can reach 600°C or higher, making it ideal for devices operating in extreme environments.

• High-frequency performance: Although the electronic mobility of silicon carbide is lower than that of silicon, it is still enough to support high-frequency applications, suitable for wireless communications, radar, and high-frequency power amplifiers.

• Radiation resistance: silicon carbide has strong radiation resistance and can withstand interference from external radiation without a significant decline in material properties, which has advantages in aerospace devices and nuclear electronics applications.

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Manufacturing characteristics:

• Crystal growth technology: chemical vapor deposition (CVD) and physical vapor deposition (PVD) are combined to ensure uniform film.

• Surface quality control: Optimize surface quality through mechanical chemical polishing and laser chemical etching.

• Defect control: Low defect density and zero layer fault design, improve device performance.

Economy:

• Large size advantage: The 12-inch wafer area is about 118% more than the 8-inch wafer, and the unit cost is reduced.

• Increase the output: reduce the number of chip cutting, improve the yield.

Technical Parameter

Applications:

Customization:

ZMSH offers a full range of 12-inch silicon carbide substrate services, including precision custom machining to meet individual needs, professional logistics to ensure safe delivery of products, and precision packaging to ensure high-quality delivery of 12-inch silicon carbide substrates.