The lanthanum strontium aluminate (LaSrAlO4) crystal substrate has emerged as the preferred choice for high-temperature superconducting thin film deposition due to its exceptional lattice matching characteristics. Featuring a stable tetragonal crystal structure, this material maintains structural integrity even at its high melting point of 1650°C, while its high density (5.92 g/cm³) and dielectric constant (16.8) provide optimal fundamental conditions for superconducting film growth. Through precisely controlled Czochralski growth processes, high-quality crystal substrates with various orientations and dimensions can be obtained to meet diverse research and application requirements. Notably, this material exhibits no phase transitions across a broad temperature range, effectively preventing crystal structure defects induced by thermal variations.
Main performance parameters | |
crystal system | square |
Growth method | Tirafa |
Lattice constant | a=3.756Å c=12.63 Å |
Melting point (°C) | 1650 |
density | 5.92(g/cm3) |
hardness | 6-6.5(mohs) |
The dielectric constant ε | ~ 22 |
size | 10×3,10×5,10×10,15×15,,20×15,20×20, |
Ф15,Ф20,Ф1″,Ф2″ | |
thickness | 0.5mm,1.0mm |
polished | Single-sided or double-sided |
Crystal orientation | <001> |
Plane orientation accuracy: | ±0.5° |
Edge Orientation Accuracy: | 2° (up to 1° for special requirements) |
Beveled wafers | Wafers with edge-oriented crystal planes inclined at specific angles (1°-45°) can be processed according to specific needs |
Ra: | ≤5Å(5µm×5µm) |
wrap | Class 100 clean bag, Class 1000 clean room |
Crystalline Structure Characteristics: Features a perovskite-type configuration analogous to SrTiO3, while demonstrating superior structural integrity and reduced lattice defect density.
Epitaxial Compatibility: Exhibits highly compatible lattice parameters with cuprate superconductors such as YBCO, providing an ideal template for high-quality superconducting epitaxial film growth.
Thermodynamic Stability: Displays more moderate thermal expansion behavior compared to conventional perovskite materials, significantly minimizing thermal mismatch stress during heteroepitaxial processes.
Dielectric Properties: Its low dielectric constant makes it exceptionally suitable for microwave and high-frequency applications.
- Superconducting Electronic Devices: With exceptional lattice compatibility, it serves as the preferred substrate material for fabricating REBCO superconducting thin films.
- High-Frequency Electronic Components: Its unique dielectric properties make it critically valuable for 5G/6G communication devices.
- Heteroepitaxial Technology: Provides an atomically flat and stable interface for the growth of complex oxide thin films.
- Cutting-Edge Materials Research: Supports the preparation and characterization of novel quantum materials such as topological insulators.
ZMSH offers customized strontium lanthanum aluminate (SrLaAlO4) crystal wafers specifically engineered to meet the rigorous demands of high-temperature superconductors and high-frequency applications. Our tailored crystal substrates are designed to support cutting-edge R&D initiatives, guaranteeing premium-quality foundations for various advanced technologies.
1. Q: What makes SrLaAlO4 crystal wafers ideal for superconducting applications?
A: Their exceptional lattice matching with REBCO superconductors (mismatch <3%) and thermal stability enable high-quality epitaxial thin film growth.
2. Q: How does SrLaAlO4 compare to LaAlO3 as a substrate material?
A: SrLaAlO4 offers superior phase stability (no twinning below 1000°C) and closer lattice matching to cuprate superconductors than LaAlO3.
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