Specifications
Brand Name :
ZMSH
Model Number :
Thermo Compression Anodic Bonding Equipment
Certification :
rohs
Place of Origin :
CHINA
MOQ :
2
Price :
by case
Payment Terms :
T/T
Delivery Time :
5-10months
Bonding Methods: :
Thermal Pressure Bonding
Compatible Wafer Sizes: :
2-8inch
Compatible Materials: :
Si, Cu, Au, Au-Sn,Al-Ge
Maximum temperature: :
600℃
Maximum pressing force: :
100kN, control accuracy ≤±1%
Anode voltage and current: :
≤2kv, ≤100mA
Description

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

Abstract of Thermo-Compression Anodic Bonding Equipment

Thermo Compression Anodic Bonding Equipment integrates dual-process bonding technology combining thermo-compression and anodic bonding, specifically designed for metallized packaging of 2"-8" wafers (e.g., Si/Cu/Al-Ge systems) with a maximum operating temperature of 600°C. Thermo Compression Anodic Bonding Equipment through precise control of temperature-pressure-voltage parameters, it achieves high-strength hermetic sealing between wafers, making it suitable for packaging applications requiring high temperature resistance and reliability, such as MEMS devices and power semiconductors. The key advantage lies in its simultaneous capability for metal diffusion bonding (thermo-compression) and glass-silicon interface bonding (anodic bonding).


Wafer Bonding System Technical Specifications

Wafer Size: 4-8 inch
Compatible Materials: Si, Cu, Au, Au-Sn, Al-Ge, etc.
Max Temperature: 600°C
Max Pressure: 100kN, Control Accuracy ±1%
Heating Rate: 30°C/min
Temperature Uniformity: ≤±2%
Anode Voltage and Current: ≤2kV, ≤100mA
Post-Bonding Accuracy: ≤5μm, ≤2μm
Loading Method: Cassette
Multi-mode Integration: Edge detection, activation, cleaning, alignment, bonding
Bonding Atmosphere: Vacuum, Methanol, Inert Gas (Optional)

Thermo Compression Anodic Bonding Equipment supports 2"-8" wafer processing with a maximum operating temperature of 600°C, pressure range of 5-200 kN, and vacuum level ≤5×10⁻³ Pa. Thermo Compression Anodic Bonding Equipment incorporates a high-precision closed-loop control system for temperature (±1°C), pressure (fluctuation ≤±1%), and voltage (0-2000 V adjustable for anodic bonding). Compatible with material systems including Si, Cu, and Al-Ge, it is specifically designed for hermetic packaging applications (leak rate ≤1×10⁻⁸ Pa·m³/s) in MEMS and power devices.


Thermal Pressure Bonding

Au-Si bonding:

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

Working principle:

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

Thermo Compression Anodic Bonding Equipment:

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

Alignment Performance of Thermo-Compression Bonding (Accuracy <2μm)

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch


Applications

· MEMS Device Packaging: Thermo Compression Anodic Bonding Equipment achieves hermetic encapsulation for microelectromechanical systems, ensuring long-term operational reliability.

· Power Semiconductor Packaging: Thermo Compression Anodic Bonding Equipment facilitates high-temperature-resistant and thermally conductive interfacial bonding for high-power chips.

· Sensor Hermetic Packaging: Thermo Compression Anodic Bonding Equipment provides moisture/oxidation-proof protective encapsulation for environmentally sensitive sensors.

· Optoelectronic Integration: Thermo Compression Anodic Bonding Equipment enables heteromaterial bonding between optical and electronic components to enhance photoelectric conversion efficiency.


Machining effect——Glass-to-Silicon Anodic Bonding | Al-Ge Eutectic Bonding

Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch


Q&A​

1. Q: What are the key advantages of thermo-compression anodic bonding compared to standard anodic bonding?
A: Combines metal diffusion bonding strength with glass-Si hermetic sealing, enabling hybrid packaging for MEMS/power devices at lower temperatures (≤600°C).


2. Q: Which materials can be bonded using thermo-compression anodic bonding?
A: Compatible with Si, glass, Cu, and Al-Ge alloys - ideal for MEMS lids, power electronics, and optoelectronic packaging.


Tag: #Thermo Compression Anodic Bonding Equipment, #Thermal Pressure Bonding, #2/4/6/8 inch Bonding, #Si, #Cu, #Al-Ge Material

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Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

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Brand Name :
ZMSH
Model Number :
Thermo Compression Anodic Bonding Equipment
Certification :
rohs
Place of Origin :
CHINA
MOQ :
2
Price :
by case
Contact Supplier
Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch
Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch
Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch

SHANGHAI FAMOUS TRADE CO.,LTD

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8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
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