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High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
Specifications
Brand Name :
ZMSH
Model Number :
SiC Powder
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Purity: :
≥ 99.9999% (6N)
Type: :
4h-n
Mohs Hardness: :
9.5
Resistivity: :
0.015～0.028Ω
Grain Size: :
20-100um
Application: :
For 4h-n Sic Crystal Growth
Description

Abstract

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

Silicon carbide powder (SiC), as a core material for third-generation semiconductors, exhibits high thermal conductivity (490 W/m·K), extreme hardness (Mohs 9.5), and wide bandgap (3.2 eV). It is primarily used for SiC crystal growth, power device substrate preparation, and high-temperature ceramic sintering. With ultra-high purity synthesis (≥99.9999%) and precise particle size control (50 nm–200 μm), it meets the requirements of PVT crystal growth furnaces and CVD epitaxial equipment.

Features

· Purity: 6N-grade (99.9999%) metallic impurity control

· Crystal Form: Controllable 4H/6H polytypes

· Particle Size: Adjustable 50 nm–200 μm (D50 distribution ±5%)

· Doping: Customizable N-type (nitrogen) or P-type (aluminum)

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

Applications

· Crystal Growth: PVT method for 4/6-inch SiC single crystals

· Epitaxial Substrates: Preparation of SiC epitaxial wafers for power devices

· Ceramic Sintering: High-temperature structural components (bearings/nozzles)

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

ZMSH SIC powder display

ZMSH with expertise in SiC materials and a production facility equipped with PVT crystal growth furnaces, we provide end-to-end solutions from high-purity powders to crystal growth equipment. Our powder purity and particle size consistency lead the industry.

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

Q&A​

1. Q: Does ZMSH provide customized SiC powder specifications?
A: Yes, we offer tailored particle sizes (50nm-200μm), doping (N/P-type), and polytypes (4H/6H).

2. Q: Can you supply SiC crystal growth equipment along with powders?
A: We provide full-chain solutions, including PVT growth furnaces and CVD systems for epitaxy.


Tag: #High-Purity, #Customized, #Silicon Carbide, #SiC Powder, #Purity 99.9999% (6N), #4H-N Type, #100μm Particle Size, #SIC Crystal Growth

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High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

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Product Detail
Brand Name :
ZMSH
Model Number :
SiC Powder
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Contact Supplier
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth
High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) 4H-N Type 100μm Particle Size SIC Crystal Growth

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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