N Type , InP Substrate With (100),(111) Or (110) Orientation , 3”, Dummy Grade

PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics application. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

​N Type, InP Substrate, 3”, Dummy Grade

Wafer Cleaning

Wafer cleaning is an integral part of the wafer industry. The cleaning process involves the removal of particulate and chemical impurities from the semiconductor. It’s imperative during the cleaning process that the substrate is not damaged in any way. Wafer cleaning is ideal for silicon-based materials since it’s the most common element that is used. Some of the benefits of wafer cleaning include:

• No damage to the silicon
• Environmentally friendly
• Safely and effectively removes any surface contaminants and imperfections
• Enhances the performance of the wafer

Transport Properties in High Electric Fields

	Field dependences of the electron drift velocity in InP, 300 K. Solid curve are theoretical calculation. Dashed and dotted curve are measured data. (Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
	The field dependences of the electron drift velocity for high electric fields. T(K): 1. 95; 2. 300; 3. 400. (Windhorn et al. [1983]).
	Field dependences of the electron drift velocity at different temperatures. Curve 1 -77 K (Gonzalez Sanchez et al. [1992]). Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
	Electron temperature versus electric field for 77 K and 300 K. (Maloney and Frey [1977])
	Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K. (Borodovskii and Osadchii [1987]).
	Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode. Monte Carlo simulation. F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2], Fo=F1=35 kV cm-1, F2=10.5 kV cm-1 (Borodovskii and Osadchii [1987]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).

Telecom/Datacom Application

Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.

Applications are:
• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s
• Metro ring access networks
• Company networks and data center
• Fibre to the home
• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication

Are You Looking for an InP substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InP wafers, send us enquiry today to learn more about how we can work with you to get you the InP wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!