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N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade
N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Indium Phosphide Wafer
Wafer Diamter :
2 inch
Conduction Type :
N Type
Grade :
Test Grade
application :
optoelectronics
keyword :
single crystal InP Wafer
Description

N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade

PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

N Type, InP Wafer, 2”, Test Grade

2"InP Wafer Specification
Item Specifications
Conduction Type N-type N-type
Dopant Undoped Sulphur
Wafer Diameter 2"
Wafer Orientation 100±0.5°
Wafer Thickness 350±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s ＞1000cm2/V.s
Resistivity N/A N/A N/A ＞0.5x107Ωcm
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette

What is InP wafer?

Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.

Recombination Parameters

Pure n-type material (no ~ 10-14cm-3)
The longest lifetime of holes τp ~ 3·10-6 s
Diffusion length Lp = (Dp·τp)1/2 Lp ~ 40 µm.
Pure p-type material(po ~ 1015cm-3)
(a)Low injection level
The longest lifetime of electrons τn ~ 2·10-9 s
Diffusion length Ln = (Dn·τn)1/2 Ln ~ 8 µm
(b) High injection level (filled traps)
The longest lifetime of electrons τ ~ 10-8 s
Diffusion length Ln Ln ~ 25 µm

N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade Surface recombination velocity versus the heat of reaction per atom of each metal phosphide ΔHR
(Rosenwaks et al. [1990]).

If the surface Fermi level EFS is pinned close to midgap (EFS~Eg/2) the surface recombination velocity increases from ~5·10-3cm/s for doping level no~3·1015 cm-3 to ~106 cm/s for doping level no ~ 3·1018cm-3 (Bothra et al. [1991]).

Radiative recombination coefficient (300 K) 1.2·10-10 cm3/s
Auger coefficient (300 K) ~9·10-31 cm6/s

Uses

InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

indium phosphide wafer

,

metal oxide varistor datasheet

,

aisi 430 chemical composition
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N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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