Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Indium Phosphide Wafer
Wafer Diamter :
3 inch
Conduction Type :
Semi Insulating
Grade :
Dummy Grade
application :
600±25um
keyword :
InP wafer
Description

Semi-Insulating ,InP ( Indium Phosphide) Crystal Wafer , 3”, Dummy Grade

PAM-XIAMEN offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Semi-Insulating, InP Wafer, 3”, Dummy Grade

3"InP Wafer Specification
Item Specifications
Conduction Type SI-type
Dopant Iron
Wafer Diameter 3"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette

What is the InP Process?

InP wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Basic Parameters

Breakdown field ≈5·105 V cm-1
Mobility electrons ≤5400 cm2V-1s-1
Mobility holes ≤200 cm2 V-1s-1
Diffusion coefficient electrons ≤130 cm2 s-1
Diffusion coefficient holes ≤5 cm2 s-1
Electron thermal velocity 3.9·105 m s-1
Hole thermal velocity 1.7·105 m s-1

Telecom/Datacom Application

Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.

Applications are:

• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s

• Metro ring access networks

• Company networks and data center

• Fibre to the home

• Connections to wireless 3G, LTE and 5G base stations

• Free space satellite communication

Are You Looking for an InP substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InP wafers, send us enquiry today to learn more about how we can work with you to get you the InP wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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Semi-Insulating ,InP ( Indium Phosphide) Crystal Wafer , 3”, Dummy Grade

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Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Semi-Insulating ,InP ( Indium Phosphide) Crystal Wafer , 3”, Dummy Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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