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P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade
P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Indium phosphide Wafer
Wafer Diamter :
3 inch
Conduction Type :
P Type
Grade :
Dummy Grade
Wafer Thickness :
350±25um
keyword :
InP Substrate Wafer
Description

P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade

PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .

Please contact our engineer team for more wafer information.

P Type, InP Substrate, 3”, Dummy Grade

3"InP Wafer Specification
Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 3"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s ＞1000cm2/V.s
Resistivity N/A N/A N/A ＞0.5x107Ω.cm
EPD <1000cm-2 <500cm-2 <1x103cm-2 <5x103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette

What is Indium Phosphide?

As we touched on in the introduction, Indium Phosphide is a semiconductor made of indium and phosphorus. It is used in high power and high-frequency electronics and has a high electron velocity. In fact, the electron velocity of InP is significantly higher than other more common semiconductors such as Silicon and Gallium Arsenide. It is also found in opto-electronic devices such as laser diodes.

Basic Parameters

Breakdown field ≈5·105 V cm-1
Mobility electrons ≤5400 cm2V-1s-1
Mobility holes ≤200 cm2 V-1s-1
Diffusion coefficient electrons ≤130 cm2 s-1
Diffusion coefficient holes ≤5 cm2 s-1
Electron thermal velocity 3.9·105 m s-1
Hole thermal velocity 1.7·105 m s-1

Uses

InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

srtio3 substrate

,

pvc compound pdk 1780

,

pcb thermadyne
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P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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