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N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers
N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
N Type Gallium Arsenide Wafer
Wafer Diamter :
4 inch
Package :
Single wafer container or cassette
Grade :
Prime Grade
Wafer Thickness :
220~450um
keyword :
GaAs wafer
Description

N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 4, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration

(0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility

1500~3000cm2/V.sec
Etch Pit Density <5000/cm2
Laser Marking

upon request
Surface Finish

P/E or P/P
Thickness

220~450um
Epitaxy Ready Yes
Package Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item Specifications Remarks
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 4, inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15°off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~350um
Epitaxy Ready Yes
Package Single wafer container or cassette

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is a GaAs Test Wafer?

Most GaAs test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

What is the Thermal properties of GaAs Wafer?

Bulk modulus 7.53·1011 dyn cm-2
Melting point 1240 °C
Specific heat 0.33 J g-1°C -1
Thermal conductivity 0.55 W cm-1 °C -1
Thermal diffusivity 0.31cm2s-1
Thermal expansion, linear 5.73·10-6 °C -1

N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers Temperature dependence of thermal conductivity (for high temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
p-type sample, po (cm-3): 5. 6·1019.
N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers Temperature dependence of linear expansion coefficient α

Melting point Tm=1513 K
For 0 < P < 45 kbar Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure (in Pascals)
1173 K 1
1323 K 100

Are You Looking for GaAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

gallium arsenide wafer

,

led smd 3528 caracteristicas

,

led smd 5050 caracteristicas
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N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , Single Crystal Gallium Arsenide Wafer , 4”, Prime Grade For LEDs And Lasers

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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