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Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade
Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Description

Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade

PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diamter 4, inch Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is GaAs wafer?

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.

What is the Electrical propertiesof GaAs Wafer

Basic Parameters

Breakdown field ≈4·105 V/cm
Mobility electrons ≤8500 cm2 V-1s-1
Mobility holes ≤400 cm2 V-1s-1
Diffusion coefficient electrons ≤200 cm2/s
Diffusion coefficient holes ≤10 cm2/s
Electron thermal velocity 4.4·105 m/s
Hole thermal velocity 1.8·105m/s

Mobility and Hall Effect

Electron Hall mobility versus temperature for different doping levels.

1. Bottom curve: Nd=5·1015cm-3;
2. Middle curve : Nd=1015cm-3;
3. Top curve : Nd=5·1015cm-3
For weakly doped GaAs at temperature close to 300 K, electron Hall mobility
µH=9400(300/T) cm2 V-1 s-1
Electron Hall mobility versus temperature for different doping levels and degrees of compensation (high temperatures):
Open circles: Nd=4Na=1.2·1017 cm-3;
Open squares: Nd=4Na=1016 cm-3;
Open triangles: Nd=3Na=2·1015 cm-3;
Solid curve represents the calculation for pure GaAs
For weakly doped GaAs at temperature close to 300 K, electron drift mobility
µn=8000(300/T)2/3 cm2 V-1 s-1
Drift and Hall mobility versus electron concentration for different degrees of compensation T= 77 K
Drift and Hall mobility versus electron concentration for different degrees of compensation T= 300 K

Approximate formula for the Hall mobility

. µn =µOH/(1+Nd·10-17)1/2, where µOH≈9400 (cm2 V-1 s-1), Nd- in cm-3
.

Temperature dependence of the Hall factor for pure n-type GaAs in a weak magnetic field
Temperature dependence of the Hall mobility for three high-purity samples

For GaAs at temperatures close to 300 K, hole Hall mobility

Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade (cm2V-1s-1), (p - in cm-3)
For weakly doped GaAs at temperature close to 300 K, Hall mobility
µpH=400(300/T)2.3 (cm2 V-1 s-1).

The hole Hall mobility versus hole density.


rH=1.25.At T= 300 K, the Hall factor in pure GaAs

Transport Properties in High Electric Fields

Field dependences of the electron drift velocity.

Solid curve was calculated by
Dashed and dotted curves are measured data, 300 K
Field dependences of the electron drift velocity for high electric fields, 300 K.
Field dependences of the electron drift velocity at different temperatures.
Fraction of electrons in L and X valleys. nL and nX as a function of electric field F at 77, 160, and 300 K, Nd=0
Dotted curve - L valleys, dashed curve - X valleys.
Mean energy E in Γ, L, and X valleys as a function of electric field F at 77, 160, and 300 K, Nd=0
Solid curve - Γ valleys, dotted curve - L valleys, dashed curve - X valleys.
Frequency dependences of electron differential mobility.
µd is real part of the differential mobility; µd*is imaginary part of differential mobility.
F= 5.5 kV cm-1
The field dependence of longitudinal electron diffusion coefficient D||F.
Solid curves 1 and 2 are theoretical calculations. Dashed curves 3, 4, and 5 are experimental data.
Curve 1 - from
Curve 2 - from
Curve 3 - from
Curve 4 - from
Curve 5 -
Field dependences of the hole drift velocity at different temperatures.
Temperature dependence of the saturation hole velocity in high electric fields
The field dependence of the hole diffusion coefficient.

Impact Ionization

There are two schools of thought regarding the impact ionization in GaAs.

The first one states that impact ionization rates αi and βi for electrons and holes in GaAs are known accurately enough to distinguish such subtle details such as the anisothropy of αi and βi for different crystallographic directions. This approach is described in detail in the work by Dmitriev et al.[1987].

Experimental curves αi and βi versus 1/F for GaAs.
Experimental curves αi and βi versus 1/F for GaAs.
Experimental curves αi and βi versus 1/F for GaAs.

The second school focuses on the values of αi and βi for the same electric field reported by different researches differ by an order of magnitude or more. This point of view is explained by Kyuregyan and Yurkov [1989]. According to this approach we can assume that αi = βi. Approximate formula for the field dependence of ionization rates:
αi = β i =αoexp[δ - (δ2 + (F0 / F)2)1/2]
where αo = 0.245·106 cm-1; β = 57.6 Fo = 6.65·106 V cm-1 (Kyuregyan and Yurkov [1989]).

Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction.

Recombination Parameter

Pure n-type material (no ~ 1014cm-3)
The longest lifetime of holes τp ~3·10-6 s
Diffusion length Lp = (Dp·τp)1/2 Lp ~30-50 µm.
Pure p-type material
(a)Low injection level
The longest lifetime of electrons τn ~ 5·10-9 s
Diffusion length Ln = (Dn·τ n)1/2 Ln ~10 µm
(b) High injection level (filled traps)
The longest lifetime of electrons τ ~2.5·10-7 s
Diffusion length Ln Ln ~ 70 µm

Surface recombination velocity versus doping density

Different experimental points correspond to different surface treatment methods.

Radiative recombination coefficient

90 K 1.8·10-8cm3/s
185 K 1.9·10-9cm3/s
300 K 7.2·10-10cm3/s

Auger coefficient

300 K ~10-30cm6/s
500 K ~10-29cm6/s

Are You Looking for GaAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

aluminum nitride thermal conductivity

,

lgc indium metal

,

aluminio pcb
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Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Semi-Insulating , Undoped Gallium Arsenide Substrate , 4”, Test Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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