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Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade
Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Semi Insulating Gaas Wafer
Wafer Diamter :
2″
Thickness :
350~675um
Grade :
Mechanical Grade
usage :
Microelectronics Application
keyword :
semiconductor substrates gallium arsenide wafer
Description

Semi-Insulating, GaAs Substrate, 2”, Mechanical Grade

PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diamter 2, inch Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
(cm2/V-s)
µn, electrons
Mobility (Drift) 400
(cm2/V-s)
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
(W/cm-degC)
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

What is GaAs wafer?

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.

What is the Thermal properties of GaAs Wafer?

Bulk modulus 7.53·1011 dyn cm-2
Melting point 1240 °C
Specific heat 0.33 J g-1°C -1
Thermal conductivity 0.55 W cm-1 °C -1
Thermal diffusivity 0.31cm2s-1
Thermal expansion, linear 5.73·10-6 °C -1

Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade Temperature dependence of thermal conductivity
n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade Temperature dependence of thermal conductivity (for high temperature)
n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
p-type sample, po (cm-3): 5. 6·1019.
Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
N is the number of atoms in 1 g og GaAs.
Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade Temperature dependence of linear expansion coefficient α

Melting point Tm=1513 K
For 0 < P < 45 kbar Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure (in Pascals)
1173 K 1
1323 K 100

Are You Looking for GaAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

semiconductor substrate

,

what is a semiconductor wafer

,

semiconductor wafer
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Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Semi - Insulating , GaAs Substrate , 2”, Mechanical Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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