Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
N Type InSb Wafer
Wafer Diamter :
4 inch
application :
photoelectromagnetic device
Grade :
Prime Grade
Wafer Thickness :
1000.0±0.5mm
keyword :
Indium Antimonide wafer
Description

N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

N Type, InSb Wafer, 4”, Prime Grade

Wafer Specification
Item Specifications
Wafer Diameter

4″ 1000.0±0.5mm

Crystal Orientation

4″ (111)AorB±0.1°

Thickness

4″ 1000±25um

Primary flat length

4″ 32.5±2.5mm

Secondary flat length

4″ 18±1mm

Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015 ≥1*1018

Thermal properties of InSb Wafer

Bulk modulus 4.7·1011 dyn cm-1
Melting point 527 °C
Specific heat 0.2 J g-1°C-1
Thermal conductivity 0.18 W cm-1 °C-1
Thermal diffusivity 0.16 cm2 s-1
Thermal expansion, linear 5.37·10-6 °C-1

N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3):
1. 2·1014;
2. 4.8·1016;
3. 4·1018.

Solid line shows the temperature dependence of thermal conductivity at high temperatures
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of thermal conductivity p-InSb.
Electron concentration at 78K p (cm-3):
1. 2.7·1014;
2. 5.3·1015;
3. 7.2·1017;
4. 6·1018.
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of specific heat at constant pressure.
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of linear expansion coefficient (low temperatures)
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of linear expansion coefficient (high temperatures)
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer Temperature dependence of Sb saturation vapor pressure

Melting point Tm = 800K.

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

Ask Latest Price
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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