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N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
N Type InSb Substrate Wafer
Wafer Diamter :
3 inch
application :
photoelectromagnetic device
Grade :
Dummy Grade
Wafer Thickness :
76.2±0.4mm
keyword :
InSb wafer Indium Antimonide
Description

N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

N Type, InSb Substrate, 3”, Dummy Grade

Wafer Specification
Item Specifications
Wafer Diameter

3″ 76.2±0.4mm
Crystal Orientation

3″ (111)AorB±0.1°
Thickness

3″ 800or900±25um
Primary flat length

3″ 22±2mm
Secondary flat length

3″ 11±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015 ≥1*1018

Optical properties of InSb Wafer

Infrared refractive index 4.0
Radiative recombination coefficient 5·10-11 cm3s-1

Infrared refractive index

For 120K < T < 360K dn/dT = 1.6·10-11·n

N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Refractive index n versus photon energy, 300 K.
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Normal incidence reflectivity versus photon energy, 300 K.
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption coefficient near the intrinsic absorption edge, T = 2K

A ground state Rydberg energy RX1= 0.5 meV.

N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption coefficient near the intrinsic absorption edge for different temperatures
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption edge of pure InSb. T (K):
1. 298;
2. 5K;
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption coefficient versus photon energy, T = 300 K.
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption coefficient versus photon energy at different doping levels, n-InSb, T = 130 K
no (cm-3):
1. 6.6·1013;
2. 7.5·1017;
3. 2.6·1018;
4. 6·1018;
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor Absorption coefficient versus photon energy at different doping levels, p-InSb, T = 5K.
po (cm-3):
1. 5.5·1017;
2. 9·1017;
3. 1.6·1018;
4. 2.6·1018;
5. 9.4·1018;
6. 2·1019;

Are You Looking for an InSb substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

semiconductor substrate

,

si substrate

,

tg170 pcb material
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N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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