N Type , InAs( Indium Arsenide ) Substrate , 3”, Prime Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

3" InAs Wafer Specification

What is the InAs Process?

InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Electrical properties of InAs Wafer

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different electron concentration: full triangles no= 4·1015 cm-3, circles no= 4·1016cm-3, open triangles no= 1.7·1016cm-3. Solid curve-calculation for pure InAs.
	Electron Hall mobility versus electron concentration. T = 77 K.
	Electron Hall mobility versus electron concentration T = 300 K
	Electron Hall mobility (R·σ) in compensated material Curve n cm-3 Na+Nd cm-3 θ=Na/Nd 1 8.2·1016 3·1017 0.58 2 3.2·1017 6.1·1018 0.9 3 5.1·1016 3.2·1018 0.96 4 3.3·1016 7.5·1017 0.91 5 7.6·1015 3.4·1017 0.95 6 6.4·1015 3.8·1017 0.96 7 3.3·1015 3.9·1017 0.98
	Electron Hall mobility versus transverse magnetic field, T = 77 K. Nd (cm-3): 1. 1.7·1016; 2. 5.8·1016.

At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.

	Hole Hall mobility (R·σ) versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.
	Hall coefficient versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018.

Transport Properties in High Electric Fields

	Steady state field dependence of the electron drift velocity, 300 K, F || (100). Theoretical calculation
	Field dependence of the electron drift velocity at different transverse magnetic fields for long (microsecond) pulses. Experimental results, 77 K Magnetic field B(T): 1. 0.0; 2. 0.3; 3. 0.9; 4. 1.5.
	Field dependence of the electron drift velocity, 77 K. Solid lines show results of theoretical calculation for different non-parabolicity α (eV-1): 1. 2.85; 2. 2.0; 3. 1.5. Points show experimental results for very short (pico-second pulses)

Impact Ionization

The dependence of ionization rates for electrons αi and holes βi versus 1/F, T =77K

For electrons:

αi = αoexp(-Fno/ F)
αo = 1.8·105 cm-1;
Fno = 1.6·105 V cm-1 (77 K)

For holes:

βi = βoexp(-Fpo/ F)
At 77 K

	Generation rate g versus electric field for relatively low fields, T = 77 K. Solid line shows result of calculation. Experimental results: open and full circles -undoped InAs, open triangles - compensated InAs.
	Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 77 K.

Recombination Parameters

Characteristic surface recombination rates (cm s-1) 102 - 104.

Radiative recombination coefficient

Auger coefficient

Are You Looking for an InAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!