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Undoped InAs Semiconductor Wafer , 3”, Prime Grade
Undoped InAs Semiconductor Wafer , 3”, Prime Grade
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Undoped InAs Wafer
Wafer Diamter :
3 inch
Conduction Type :
N Type
Grade :
Prime Grade
Wafer Thickness :
600±25um
keyword :
Indium arsenide InAs wafer
Description

Undoped InAs Semiconductor Wafer , 3”, Prime Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

3" InAs Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type N-type
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration 5x1016cm-3
Mobility ≥2x104cm2/V.s
EPD <5x104cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

What is a InAs test Wafer?

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

Optical properties of InAs wafer

Infrared refractive index ≈3.51 (300 K)
Radiative recombination coefficient 1.1·10-10 cm3/s
Long-wave TO phonon energy hνTO ≈27 meV (300 K)
Long-wave LO phonon energy hνLO ≈29 meV (300 K)

Undoped InAs Semiconductor Wafer , 3”, Prime Grade Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K.

For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)

Undoped InAs Semiconductor Wafer , 3”, Prime Grade Normal incidence reflectivity versus photon energy, 300 K
Undoped InAs Semiconductor Wafer , 3”, Prime Grade Absorption coefficient near the intrinsic absorption edge for n-InAs.
T=4.2 K
Undoped InAs Semiconductor Wafer , 3”, Prime Grade Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.

A ground state Rydberg energy RX1= 3.5 meV

Undoped InAs Semiconductor Wafer , 3”, Prime Grade Absorption coefficient versus photon energy, T = 300 K
Undoped InAs Semiconductor Wafer , 3”, Prime Grade Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;

Are You Looking for an InAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

indium phosphide wafer

,

inas wafer

,

gallium arsenide wafer
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Undoped InAs Semiconductor Wafer , 3”, Prime Grade

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
Undoped InAs Semiconductor Wafer , 3”, Prime Grade

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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