P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade

PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

2" InAs Wafer Specification

What is the InAs Process?

InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Band structure and carrier concentration of InAs Wafer

Basic Parameters

Band structure and carrier concentration of InAs. Important minima of the conduction band and maxima of the valence band. Eg= 0.35 eV EL= 1.08 eV EX= 1.37 eV Eso = 0.41 eV

Temperature Dependences

Temperature dependence of the direct energy gap

Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),

where T is temperature in degrees K (0 <T < 300).

Effective density of states in the conduction band

Nc≈1.68·1013·T3/2 (cm-3).

Effective density of states in the valence band

Nv≈ 1.27·1015·T3/2(cm-3).

	The temperature dependences of the intrinsic carrier concentration.
	Fermi level versus temperature for different concentrations of shallow donors and acceptors.

Dependences on Hydrostatic Pressure

Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)

where P is pressure in kbar

Energy Gap Narrowing at High Doping Levels

Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density. Curves are calculated according Points show experimental results for n-InAs

For n-type InAs

ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)

For p-type InAs

ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)

Effective Masses

Electrons:

Electron effective mass versus electron concentration

Holes:

Effective mass of density of states mv = 0.41mo

Donors and Acceptors

Ionization energies of shallow donors

≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu

Ionization energies of shallow acceptors, eV

Are You Looking for an InAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!