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P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready
P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
P Type InAs Wafer
Wafer Diamter :
2 inch
Conduction Type :
P Type
Grade :
Prime Grade
Wafer Thickness :
500±25um
keyword :
Epi Ready Indium Arsenide Wafer
Description

P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready

PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode lasers in lower noise or higher-power applications at room temperature. in diameter up to 4 inch. Indium Arsenide ( InAs ) crystal is formed by two elements , Indium and Arsenide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs wafer is is similar to gallium arsenide and is a direct bandgap material.

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

2" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

What is a InAs test Wafer?

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

Basic Parameters at 300 K of InAs Wafer?

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 3.59·1022
de Broglie electron wavelength 400 A
Debye temperature 280 K
Density 5.68 g cm-3
Dielectric constant (static) 15.15
Dielectric constant (high frequency) 12.3
Effective electron mass 0.023mo
Effective hole masses mh 0.41mo
Effective hole masses mlp 0.026mo
Electron affinity 4.9 eV
Lattice constant 6.0583 A
Optical phonon energy 0.030 eV

Are You Looking for an InAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product tags

inas wafer

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led p3 91 manufacturer

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pa66 materials
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P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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